公开(公告)号：US20220301880A1

公开(公告)日：2022-09-22

申请号：US17690709

申请日：2022-03-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi YAMASHITA ,  Koji KAGAWA

IPC: H01L21/311 ,  H01L21/02 ,  B08B3/08 ,  B08B13/00 ,  F26B5/00

Abstract: A substrate processing method includes: a preparing process of preparing a substrate in which a zirconium oxide film as a mask has been formed on a laminated film and dry-etched into a given shape; after the preparing process, a mask removing process of removing the zirconium oxide film by supplying a mask removing liquid containing sulfuric acid as a main component to the substrate; and after the mask removing process, a drying process of drying a surface of the substrate that is wet with a rinsing liquid.