SYSTEMS AND METHODS FOR INHIBITING DEFECTIVITY, METAL PARTICLE CONTAMINATION, AND FILM GROWTH ON WAFERS

    公开(公告)号:US20200152453A1

    公开(公告)日:2020-05-14

    申请号:US16681634

    申请日:2019-11-12

    Abstract: Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes coating the front side surface, the backside surface and the side edge surface with a self-assembled monolayer and exposing an area of interest with actinic radiation. The actinic radiation causes a de-protection reaction within the self-assembled monolayer within the central region. The method also includes removing the self-assembled monolayer from the area of interest while the self-assembled monolayer remains on remaining surfaces of the substrate.

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