公开(公告)号：US20170221704A1

公开(公告)日：2017-08-03

申请号：US15416645

申请日：2017-01-26

Applicant: Tokyo Electron Limited

Inventor： Nihar Mohanty ,  Lior Huli ,  Jeffrey Smith ,  Richard Farrell

IPC: H01L21/02 ,  C23C16/455

CPC classification number: H01L21/02359 ,  C23C16/45525 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/02282 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/02334 ,  H01L21/0234 ,  H01L21/0332

Abstract: Techniques herein provide methods for depositing spin-on metal materials for creating metal hard mask (MHM) structures without voids in the deposition. This includes effective spin-on deposition of TiOx, ZrOx, SnOx, HFOx, TaOx, et cetera. Such materials can help to provide differentiation of material etch resistivity for differentiation. By enabling spin-on metal hard mask (MHM) for use with a multi-line layer, a slit-based or self-aligned blocking strategy can be effectively used. Techniques herein include identifying a fill material to fill particular openings in a given relief pattern, modifying a surface energy value of surfaces within the opening such that a contact angle value of an interface between the fill material in liquid form and the sidewall or floor surfaces enables gap-free or void-free filling.

公开(公告)号：US11676817B2

公开(公告)日：2023-06-13

申请号：US16916452

申请日：2020-06-30

Applicant: Tokyo Electron Limited

Inventor： Akiteru Ko ,  Richard Farrell

IPC: H01L21/033 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027

CPC classification number: H01L21/0338 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/26 ,  H01L21/0275 ,  H01L21/0276 ,  H01L21/0335 ,  H01L21/0337

Abstract: A method of forming a device includes forming a hard mask layer over an underlying layer of a substrate, forming an anti-reflective coating layer over the hard mask layer, forming a patterned resist layer over the anti-reflective coating layer, and forming a mandrel including the anti-reflective coating layer by patterning the anti-reflective coating layer using the patterned resist layer as an etch mask. The method includes forming a sidewall spacer on the mandrel including the anti-reflective coating layer, forming a freestanding spacer on the hard mask layer by removing the mandrel from the anti-reflective coating layer, and using the freestanding spacer as an etch mask, patterning the underlying layer of the substrate.

公开(公告)号：US20210407804A1

公开(公告)日：2021-12-30

申请号：US16916452

申请日：2020-06-30

Applicant: Tokyo Electron Limited

Inventor： Akiteru Ko ,  Richard Farrell

IPC: H01L21/033 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027

Abstract: A method of forming a device includes forming a hard mask layer over an underlying layer of a substrate, forming an anti-reflective coating layer over the hard mask layer, forming a patterned resist layer over the anti-reflective coating layer, and forming a mandrel including the anti-reflective coating layer by patterning the anti-reflective coating layer using the patterned resist layer as an etch mask. The method includes forming a sidewall spacer on the mandrel including the anti-reflective coating layer, forming a freestanding spacer on the hard mask layer by removing the mandrel from the anti-reflective coating layer, and using the freestanding spacer as an etch mask, patterning the underlying layer of the substrate.

公开(公告)号：US11043378B2

公开(公告)日：2021-06-22

申请号：US16681634

申请日：2019-11-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Corey Lemley ,  Richard Farrell ,  Hoyoung Kang

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/04

Abstract: Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes coating the front side surface, the backside surface and the side edge surface with a self-assembled monolayer and exposing an area of interest with actinic radiation. The actinic radiation causes a de-protection reaction within the self-assembled monolayer within the central region. The method also includes removing the self-assembled monolayer from the area of interest while the self-assembled monolayer remains on remaining surfaces of the substrate.

公开(公告)号：US10978307B2

公开(公告)日：2021-04-13

申请号：US16938049

申请日：2020-07-24

Applicant: Tokyo Electron Limited

Inventor： David O'Meara ,  Eric Chih-Fang Liu ,  Richard Farrell ,  Soo Doo Chae

IPC: H01L21/3065 ,  H01L21/033 ,  H01L21/02

Abstract: A method of patterning a substrate includes receiving a substrate having microfabricated structures, including mandrels; executing a deposition process that deposits a first material on the mandrels, the deposition process including cyclically moving the substrate through a set of deposition modules. The substrate is moved through the set of deposition modules so that the first material is deposited at a first thickness at top portions of the mandrels and at a second thickness at bottom portions of mandrels, the first thickness being greater than the second thickness. The method includes executing a spacer deposition process that conformally deposits a second material on the substrate; executing a spacer open etch that removes depositions of the second material from over a top surface of the mandrels; removing the first material and the mandrels from the substrate, leaving sidewall spacers; and transferring a pattern defined by the sidewall spacers into an underlying layer.

公开(公告)号：US20210057226A1

公开(公告)日：2021-02-25

申请号：US16938049

申请日：2020-07-24

Applicant: Tokyo Electron Limited

Inventor： David O'Meara ,  Eric Chih-Fang Liu ,  Richard Farrell ,  Soo Doo Chae

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/033

Abstract: A method of patterning a substrate includes receiving a substrate having microfabricated structures, including mandrels; executing a deposition process that deposits a first material on the mandrels, the deposition process including cyclically moving the substrate through a set of deposition modules. The substrate is moved through the set of deposition modules so that the first material is deposited at a first thickness at top portions of the mandrels and at a second thickness at bottom portions of mandrels, the first thickness being greater than the second thickness. The method includes executing a spacer deposition process that conformally deposits a second material on the substrate; executing a spacer open etch that removes depositions of the second material from over a top surface of the mandrels; removing the first material and the mandrels from the substrate, leaving sidewall spacers; and transferring a pattern defined by the sidewall spacers into an underlying layer.

公开(公告)号：US20200152453A1

公开(公告)日：2020-05-14

申请号：US16681634

申请日：2019-11-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Corey LEMLEY ,  Richard Farrell ,  Hoyoung Kang

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/04

Abstract: Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes coating the front side surface, the backside surface and the side edge surface with a self-assembled monolayer and exposing an area of interest with actinic radiation. The actinic radiation causes a de-protection reaction within the self-assembled monolayer within the central region. The method also includes removing the self-assembled monolayer from the area of interest while the self-assembled monolayer remains on remaining surfaces of the substrate.

公开(公告)号：US10141183B2

公开(公告)日：2018-11-27

申请号：US15416645

申请日：2017-01-26

Applicant: Tokyo Electron Limited

Inventor： Nihar Mohanty ,  Lior Huli ,  Jeffrey Smith ,  Richard Farrell

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/033

Abstract: Techniques herein provide methods for depositing spin-on metal materials for creating metal hard mask (MHM) structures without voids in the deposition. This includes effective spin-on deposition of TiOx, ZrOx, SnOx, HFOx, TaOx, et cetera. Such materials can help to provide differentiation of material etch resistivity for differentiation. By enabling spin-on metal hard mask (MHM) for use with a multi-line layer, a slit-based or self-aligned blocking strategy can be effectively used. Techniques herein include identifying a fill material to fill particular openings in a given relief pattern, modifying a surface energy value of surfaces within the opening such that a contact angle value of an interface between the fill material in liquid form and the sidewall or floor surfaces enables gap-free or void-free filling.

公开(公告)号：US11567407B2

公开(公告)日：2023-01-31

申请号：US16586011

申请日：2019-09-27

Applicant: Tokyo Electron Limited

Inventor： Richard Farrell ,  Hoyoung Kang ,  David L. O'Meara

IPC: G03F7/11 ,  H01L21/027 ,  G03F7/16 ,  G03F7/038 ,  G03F7/30 ,  G03F7/039 ,  G03F7/20

Abstract: A method of processing a substrate includes: providing structures on a surface of a substrate; depositing a self-assembled monolayer (SAM) over the structures and the substrate, the SAM being reactive to a predetermined wavelength of radiation; determining a first pattern of radiation exposure, the first pattern of radiation exposure having a spatially variable radiation intensity across the surface of the substrate and the structures; exposing the SAM to radiation according to the first pattern of radiation exposure, the SAM being configured to react with the radiation; developing the SAM with a predetermined removal fluid to remove portions of the SAM that are not protected from the predetermined fluid; and depositing a spacer material on the substrate and the structures, the spacer material being deposited at varying thicknesses based on an amount of the SAM remaining on the surface of the substrate and the structures.

公开(公告)号：US20220236639A1

公开(公告)日：2022-07-28

申请号：US17155931

申请日：2021-01-22

Applicant: Tokyo Electron Limited

Inventor： Lior Huli ,  Richard Farrell

IPC: G03F7/00 ,  C09D153/00 ,  C08L53/00 ,  C08L25/06 ,  B81C1/00

Abstract: A method for forming a device includes blending, in a mixer within a fabrication facility, a first liquid including a first block copolymer with a second liquid including a second block copolymer to form a first mixture. The first block copolymer includes a first homopolymer and a second homopolymer, where the first homopolymer has a first mole fraction in the first liquid. The second block copolymer includes the first homopolymer and the second homopolymer, the first homopolymer having a second mole fraction in the second liquid, the first mole fraction being different from the second mole fraction. The method includes placing a substrate over a substrate holder of a processing chamber within the fabrication facility; and coating the substrate with the first mixture within the processing chamber.