公开(公告)号：US20220301834A1

公开(公告)日：2022-09-22

申请号：US17696280

申请日：2022-03-16

申请人： TOKYO ELECTRON LIMITED

发明人： Hwajun JUNG ,  Mitsunori Ohata ,  Yuki Hosaka ,  Wan Sung Jin

IPC分类号： H01J37/32

摘要： A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber, an annular baffle plate disposed so as to surround the substrate support, the annular baffle plate having a plurality of openings, a first annular plate disposed below the annular baffle plate, a second annular plate disposed below the first annular plate, the second annular plate having an annular overlapping portion vertically overlapping with a part of the first annular plate, a pressure detector configured to detect a pressure in the plasma processing chamber, and at least one actuator configured to vertically move at least one of the first and second annular plates so as to change a distance between the first annular plate and the second annular plate based on the detected pressure.

公开(公告)号：US20220102119A1

公开(公告)日：2022-03-31

申请号：US17485318

申请日：2021-09-24

申请人： TOKYO ELECTRON LIMITED

发明人： Hwajun JUNG ,  Mitsunori OHATA ,  Yuki HOSAKA

IPC分类号： H01J37/32

摘要： A plasma processing apparatus comprising a processing chamber, a dielectric, an antenna, and a first to third electromagnet groups is disclosed. In the processing chamber, a mounting table having a mounting surface is included and a plasma process is performed. A surface of the dielectric faces the mounting surface. The antenna, provided on the opposite surface of the dielectric, introduces an electric field into the processing table through the dielectric to form plasma. The first electromagnet group, provided at a position higher than the mounting surface on an outer perimeter of the processing chamber, forms a first magnetic field above the mounting surface. The second electromagnet group, provided inside the mounting table along an outer perimeter thereof, and the third electromagnet group, provided at a position corresponding to the second electromagnet group on the outer perimeter of the processing chamber, cooperate with each other to form a second magnetic field around the mounting surface.

公开(公告)号：US20210159054A1

公开(公告)日：2021-05-27

申请号：US17094870

申请日：2020-11-11

申请人： TOKYO ELECTRON LIMITED

发明人： Hwajun JUNG ,  Yuji KITAMURA

IPC分类号： H01J37/32

摘要： A gas supply system is connected between at least one gas source and a chamber having a first and a second gas inlet. The gas supply system includes a flow adjusting unit including flow adjusting lines, each including a pair of a first line and a second line. The first line connects the at least one gas source and the first gas inlet and has a first valve and a first orifice, the second line connects the at least one gas source and the second gas inlet and has a second valve and a second orifice, and the first orifice and the second orifice in each of the flow adjusting lines have the same size. The gas supply system further includes at least one control unit configured to control an opening/closing of the first valve and an opening/closing of the second valve in each of the flow adjusting lines.