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公开(公告)号：US10541142B2
公开(公告)日：2020-01-21
申请号：US16094986
申请日：2017-04-10
IPC分类号： H01L21/3065 , H01L21/687 , H01J37/32 , H01L21/683 , H05H1/46
摘要： A plasma processing apparatus includes a support structure configured to support a workpiece and a first drive device configured to rotate the support structure about a first axis extending in a direction orthogonal to a vertical direction. The support structure includes a holding unit including an electrostatic chuck and a container provided under the holding unit. The container includes a tubular container body, and a bottom cover configured to close a bottom side opening of the container body and to be detachable from the container body. A maintenance method includes: rotating a support structure about a first axis such that the bottom cover is positioned above an electrostatic chuck, removing the bottom cover from the container body, and maintaining a component provided in the container body.
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公开(公告)号：US11101114B2
公开(公告)日：2021-08-24
申请号：US15312225
申请日：2015-06-05
发明人： Yuki Hosaka , Yoshihiro Umezawa , Toshiki Nakajima
IPC分类号： H01J37/32 , H01L21/67 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/311
摘要： A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
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公开(公告)号：US10510514B2
公开(公告)日：2019-12-17
申请号：US15508054
申请日：2015-09-24
发明人： Yuki Hosaka , Yoshihiro Umezawa , Mayo Uda , Takashi Kubo
IPC分类号： F16K3/08 , H01J37/32 , H01L21/3065 , C23C16/455 , F16K31/04 , H01L21/67
摘要： According to an aspect, a gas supply mechanism for supplying a gas to a semiconductor manufacturing apparatus is provided. The gas supply mechanism includes a pipe connecting a gas source and the semiconductor manufacturing apparatus to each other, and a valve which is provided on the pipe. The valve includes a plate rotatable about an axis, the axis extending in a plate thickness direction, and a housing provided along the plate without contacting the plate to accommodate the plate, the housing providing a gas supply path along with the pipe. A through hole is formed in the plate, the through hole penetrating the plate at a position on a circle which extends around the axis and intersects the gas supply path.
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公开(公告)号：US20220301834A1
公开(公告)日：2022-09-22
申请号：US17696280
申请日：2022-03-16
发明人： Hwajun JUNG , Mitsunori Ohata , Yuki Hosaka , Wan Sung Jin
IPC分类号： H01J37/32
摘要： A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber, an annular baffle plate disposed so as to surround the substrate support, the annular baffle plate having a plurality of openings, a first annular plate disposed below the annular baffle plate, a second annular plate disposed below the first annular plate, the second annular plate having an annular overlapping portion vertically overlapping with a part of the first annular plate, a pressure detector configured to detect a pressure in the plasma processing chamber, and at least one actuator configured to vertically move at least one of the first and second annular plates so as to change a distance between the first annular plate and the second annular plate based on the detected pressure.
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公开(公告)号：US11348768B2
公开(公告)日：2022-05-31
申请号：US16868849
申请日：2020-05-07
发明人： Yuki Hosaka , Yoshihiro Umezawa , Toshiki Nakajima , Mayo Uda
IPC分类号： H01J37/32 , C23C16/44 , C23C16/455 , C23C16/50
摘要： A plasma processing apparatus includes a processing container; a placement table provided in the processing container and including a placement region on which a workpiece is placed for a plasma processing; a baffle structure that defines a first space and a second space, and including a first member and at least one second member; a gas supply portion connected to the first space; a first pressure gauge connected to the first space; an exhaust apparatus connected to the second space; a second pressure gauge connected to the second space; a driving mechanism that moves the at least one second member in a vertical direction; a displacement gauge configured to measure a position or a distance of the second member; and a controller that controls the driving mechanism. The controller controls the driving mechanism such that a pressure of the first space becomes a predetermined pressure designated by a recipe.
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6.发明申请公开(公告)号：US20170301579A1
公开(公告)日：2017-10-19
申请号：US15509522
申请日：2015-09-24
IPC分类号： H01L21/687 , H01L21/67 , H01L21/311
CPC分类号： H01L21/68764 , H01L21/31116 , H01L21/67103 , H01L21/67109 , H01L21/67242 , H01L21/68742
摘要： A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.
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公开(公告)号：US11804366B2
公开(公告)日：2023-10-31
申请号：US17402398
申请日：2021-08-13
发明人： Yuki Hosaka , Yoshihiro Umezawa , Toshiki Nakajima
IPC分类号： H01J37/32 , H01L21/67 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/311
CPC分类号： H01J37/32633 , C23C16/4412 , C23C16/45587 , C23C16/45589 , C23C16/45591 , H01J37/32449 , H01J37/32715 , H01J37/32834 , H01L21/02274 , H01L21/31116 , H01L21/6719 , H01L21/67069 , H01J2237/334
摘要： A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
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公开(公告)号：US20220108871A1
公开(公告)日：2022-04-07
申请号：US17495760
申请日：2021-10-06
发明人： Yohei Yamazawa , Takehisa Saito , Naoki Fujiwara , Kaori Fujiwara , Daisuke Kurashina , Yuki Hosaka
摘要： A plasma processing apparatus includes: a main coil disposed on or above a plasma processing chamber; and a sub-coil assembly disposed radially inside or outside the main coil. The sub-coil assembly includes a first spiral coil and a second spiral coil. Each turn of the first spiral coil and each turn of the second spiral coil are alternately arranged in a vertical direction. A first upper terminal of the first spiral coil is connected to a ground potential via one or more capacitors, and a first lower terminal of the first spiral coil is connected to the ground potential. A second upper terminal of the second spiral coil is connected to the ground potential via one or more capacitors or one or more other capacitors, and a second lower terminal of the second spiral coil is connected to the ground potential.
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公开(公告)号：US20210384013A1
公开(公告)日：2021-12-09
申请号：US17338826
申请日：2021-06-04
发明人： Hwajun Jung , Masahiro Suzuki , Yuki Hosaka , Mitsunori Ohata
IPC分类号： H01J37/32 , H01L21/67 , H01L21/687 , H01L21/683
摘要： A plasma processing apparatus includes a plasma processing chamber; a substrate support disposed in the plasma processing chamber and including an electrostatic chuck; a first ring disposed on the electrostatic chuck to surround a substrate on the electrostatic chuck and including an inner annular portion, an intermediate annular portion, and an outer annular portion, a top surface of the inner annular portion being higher than that of the intermediate annular portion, a top surface of the outer annular portion being higher than that of the inner annular portion; a second ring disposed on the intermediate annular portion; and an actuator configured to vertically move the second ring to maintain a top surface of the second ring at a first height greater than a height of the top surface of the inner annular portion and less than a height of the top surface of the outer annular portion.
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公开(公告)号：US10950467B2
公开(公告)日：2021-03-16
申请号：US15484389
申请日：2017-04-11
发明人： Yuki Hosaka , Yoshihiro Umezawa , Toshiki Nakajima , Mayo Uda , Kenichi Shimono
摘要： The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
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