公开(公告)号：US20190123165A1

公开(公告)日：2019-04-25

申请号：US16169233

申请日：2018-10-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji AKIYAMA ,  Hajime NAKABAYASHI ,  Kazuki HASHIMOTO ,  Sara OTSUKI

IPC: H01L29/51 ,  H01L29/49 ,  H01L29/12 ,  H01L27/092

Abstract: There is provided a semiconductor device. The semiconductor device includes a first electrode made of a metal, a first semiconductor, a first insulating film configured to be provided between the first electrode and the first semiconductor and to be made of an insulating transition metal oxide and an intermediate film configured to be provided between the first electrode and the first insulating film. A lower end of a conduction band of the intermediate film is lower than a Fermi level of the metal constituting the first electrode.