公开(公告)号：US20190355589A1

公开(公告)日：2019-11-21

申请号：US16413068

申请日：2019-05-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiko ORII ,  Yasuo ASADA ,  Jun LIN ,  Ayano HAGIWARA ,  Shinji IRIE ,  Kenji TANOUCHI ,  Kakeru WADA

IPC: H01L21/3213 ,  H01L21/67

Abstract: There is provided a method of etching a silicon-containing film formed on a substrate, the method including: etching the silicon-containing film by using both a first fluorine-containing gas and a second fluorine-containing gas, the first fluorine-containing gas including at least an F2 gas and the second fluorine-containing gas including at least a ClF3 gas, an IF7 gas, an IF5 gas or an SF6 gas.