公开(公告)号：US20150259796A1

公开(公告)日：2015-09-17

申请号：US14657524

申请日：2015-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keisuke SUZUKI ,  Hiroki MURAKAMI ,  Shingo HISHIYA ,  Kentaro KADONAGA ,  Minoru OBATA

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/458 ,  C23C16/26 ,  C23C16/44 ,  C23C16/52

CPC classification number: C23C16/30 ,  C23C16/4408 ,  C23C16/45529 ,  C23C16/45531

Abstract: A method of forming a thin film containing a doping element in a vacuum atmosphere, which includes: supplying a source gas into a processing vessel being under the vacuum atmosphere through a source gas supply unit such that a source of the source gas is adsorbed onto a substrate in the processing vessel; repeating, a plurality of times, a sequence of operations of supplying a doping gas containing the doping element into the processing vessel through a doping gas supply unit, followed by sealing the doping gas inside the processing vessel, followed by vacuum-exhausting the processing vessel; supplying a reaction gas into the processing vessel through a reaction gas supply unit such that the reaction gas reacts with the source to produce a reaction product; and replacing an internal atmosphere of the processing vessel, the replacing being performed between the operations.

Abstract translation: 一种在真空气氛中形成含有掺杂元素的薄膜的方法，包括：通过源气体供应单元将源气体供应到处于真空气氛下的处理容器中，使得源气体源被吸附到 处理容器中的底物; 重复多次，通过掺杂气体供应单元将含有掺杂元素的掺杂气体供应到处理容器中的操作的顺序，然后将处理容器内的掺杂气体密封，然后真空排出处理容器 ; 通过反应气体供应单元将反应气体供应到处理容器中，使得反应气体与源反应产生反应产物; 并且更换处理容器的内部气氛，在操作之间进行更换。