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公开(公告)号：US11798787B2
公开(公告)日：2023-10-24
申请号：US17409255
申请日：2021-08-23
IPC分类号： H01J37/32
CPC分类号： H01J37/32174 , H01J37/32146
摘要： A plasma processing apparatus includes: a source RF generator that generates a source RF pulsed signal of at least three power levels; first and second bias RF generators that generate first and second bias RF pulsed signals of at least two power levels; a synchronization signal generator that generates a synchronization signal; a first matching circuit connected to the source RF generator and an antenna, thereby allowing the source RF pulsed signal to be supplied from the source RF generator to the antenna through the first matching circuit; and a second matching circuit connected to the first and second bias RF generators and a substrate support, thereby allowing the first and second bias RF pulse signals to be supplied from the first and second bias RF generators to the substrate support through the second matching circuit.
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公开(公告)号：US20220108871A1
公开(公告)日：2022-04-07
申请号：US17495760
申请日：2021-10-06
发明人： Yohei Yamazawa , Takehisa Saito , Naoki Fujiwara , Kaori Fujiwara , Daisuke Kurashina , Yuki Hosaka
摘要： A plasma processing apparatus includes: a main coil disposed on or above a plasma processing chamber; and a sub-coil assembly disposed radially inside or outside the main coil. The sub-coil assembly includes a first spiral coil and a second spiral coil. Each turn of the first spiral coil and each turn of the second spiral coil are alternately arranged in a vertical direction. A first upper terminal of the first spiral coil is connected to a ground potential via one or more capacitors, and a first lower terminal of the first spiral coil is connected to the ground potential. A second upper terminal of the second spiral coil is connected to the ground potential via one or more capacitors or one or more other capacitors, and a second lower terminal of the second spiral coil is connected to the ground potential.
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