公开(公告)号：US20200063258A1

公开(公告)日：2020-02-27

申请号：US16545588

申请日：2019-08-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tsuyoshi TAKAHASHI ,  Noboru MIYAGAWA ,  Susumu ARIMA ,  Seokhyoung HONG ,  Hiroaki ASHIZAWA

IPC: C23C16/455 ,  C23C16/34

Abstract: A method of forming a TiSiN film having a desired film characteristic includes: forming a TiN film by executing an operation of supplying, into a process container in which a substrate is accommodated, a Ti-containing gas and a nitrogen-containing gas in this order a number of times X, X being an integer of 1 or more; and forming a SiN film by executing an operation of supplying, into the process container, a Si-containing gas and a nitrogen-containing gas in this order a number of times Y, Y being an integer of 1 or more, wherein forming a TiN film and forming a SiN film are executed in this order a number of times Z, Z being an integer of 1 or more, and wherein, in forming a SiN film, a flow rate of the Si-containing gas is controlled to be a flow rate determined according to the desired film characteristic.