公开(公告)号：US20160177445A1

公开(公告)日：2016-06-23

申请号：US14978405

申请日：2015-12-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tsuyoshi TAKAHASHI ,  Masaki SANO ,  Takashi KAMIO ,  Toshio TAKAGI

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/45565 ,  C23C16/45589

Abstract: A film forming apparatus includes a mounting table mounting a substrate thereon, a gas diffusion unit above the mounting table, gas dispersion units above the gas diffusion unit, and an evacuation unit to evacuate a processing chamber. The gas diffusion unit has gas injection holes for injecting a gas in a shower shape. Outermost gas injection holes are arranged outward of an outer circumference of the substrate when seen from the top. The gas dispersion units face the gas diffusion unit through a diffusion space therebetween. Each of the gas dispersion units has gas discharge holes formed along a circumferential direction thereof to disperse a gas horizontally into the diffusion space. The gas dispersion units include at least three first gas dispersion units along a first circle, and at least three second gas dispersion units along a second circle concentrically disposed at an outer side of the first circle.

Abstract translation: 一种成膜装置包括：安装基板的安装台，安装台上方的气体扩散单元，气体扩散单元上方的气体分散单元，以及抽出处理室的排气单元。 气体扩散单元具有用于喷射淋浴形状的气体的气体注入孔。 当从顶部观察时，最外部的气体注入孔布置在基板的外周的外侧。 气体分散单元通过其间的扩散空间面对气体扩散单元。 每个气体分散单元具有沿其圆周方向形成的气体排出孔，以将气体水平地分散到扩散空间中。 气体分散单元包括沿着第一圆的至少三个第一气体分散单元和沿着同心地设置在第一圆的外侧的第二圆的至少三个第二气体分散单元。

公开(公告)号：US20230037960A1

公开(公告)日：2023-02-09

申请号：US17758819

申请日：2020-11-30

Applicant: Tokyo Electron Limited

Inventor： Seokhyoung HONG ,  Tsuyoshi TAKAHASHI ,  Taichi MONDEN

IPC: H01L21/285 ,  H01L21/321 ,  H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  C23C16/06 ,  C23C14/06 ,  C23C14/18 ,  C23C16/56 ,  C23C14/58

Abstract: A film forming method includes: providing the substrate into the processing container; forming a metal-based film on the substrate within the processing container; and subsequently, supplying a Si-containing gas into the processing container in a state in which the substrate is provided within the processing container.

公开(公告)号：US20230030762A1

公开(公告)日：2023-02-02

申请号：US17812523

申请日：2022-07-14

Applicant: Tokyo Electron Limited

Inventor： Kensuke HIGUCHI ,  Asaka FUJIKAWA ,  Tsuyoshi TAKAHASHI

IPC: H01L27/108 ,  C23C16/34 ,  C23C16/455 ,  C23C16/02

Abstract: A method of forming a titanium nitride film on a substrate. The method includes: performing treatment of changing hydrophilicity of a base film formed on a substrate including a surface on which the base film capable of having its hydrophilicity changed is formed; and forming a titanium nitride film by vapor phase growth on a top surface of the base film subjected to the treatment of changing the hydrophilicity.

公开(公告)号：US20220238311A1

公开(公告)日：2022-07-28

申请号：US17596129

申请日：2020-05-26

Applicant: Tokyo Electron Limited

Inventor： Atsushi KUBO ,  Tsuyoshi TAKAHASHI

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/455 ,  C23C16/40

Abstract: A substrate processing method for performing a predetermined process on a substrate includes performing, a plurality of times, a cycle including (a) supplying a first processing gas into a processing container to which an exhaust pipe is connected and which accommodates the substrate and (b) supplying a second processing gas into the processing container, wherein at least one of (a) and (b) includes (c) introducing a ballast gas into the exhaust pipe and forming plasma of the processing gas supplied into the processing container.

公开(公告)号：US20220290294A1

公开(公告)日：2022-09-15

申请号：US17653690

申请日：2022-03-07

Applicant: Tokyo Electron Limited

Inventor： Masafumi TAKAHASHI ,  Kenji SUZUKI ,  Tsuyoshi TAKAHASHI ,  Masaki SANO

IPC: C23C16/02 ,  C23C16/14 ,  C23C16/455

Abstract: A method includes: forming a titanium nitride base film containing silicon by alternately repeating: precipitation of titanium nitride by alternately and repeatedly supplying a titanium-containing gas, and supplying a nitriding gas to a substrate on which a recess is formed; and precipitation of silicon nitride by alternately and repeatedly supplying a silicon-containing gas, and supplying a nitriding gas to the substrate; and subsequently, forming a tungsten film so as to bury tungsten in the recess in which the titanium nitride base film is formed, by alternately and repeatedly supplying a raw material gas containing a tungsten raw material and a reaction gas reacting with the raw material gas, to the substrate. A supply flow rate of the silicon-containing gas is adjusted so that a content of the silicon in the titanium nitride base film is high on an opening side rather than on an inner side of the recess.

公开(公告)号：US20200056287A1

公开(公告)日：2020-02-20

申请号：US16538086

申请日：2019-08-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tsuyoshi TAKAHASHI ,  Kazuyoshi YAMAZAKI ,  Hideo NAKAMURA ,  Yoshikazu IDENO

IPC: C23C16/455 ,  C23C16/34

Abstract: A film-forming method for forming a metal nitride film on a substrate includes: forming the metal nitride film on the substrate by repeating a cycle a predetermined number of times, the cycle including: a first process of supplying a metal-containing gas into a process container configured to accommodate the substrate therein; a second process of supplying a purge gas into the process container; a third process of supplying a nitrogen-containing gas into the process container; and a fourth process of supplying the purge gas into the process container, wherein the fourth process includes: a first step of supplying a first purge gas having a first flow rate equal to or larger than a flow rate of the metal-containing gas of the first process; and a second step of supplying the first purge gas having a second flow rate smaller than the first flow rate.

公开(公告)号：US20220356565A1

公开(公告)日：2022-11-10

申请号：US17661577

申请日：2022-05-02

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi TAKAHASHI ,  Seokhyoung HONG ,  Kensuke HIGUCHI

IPC: C23C16/34 ,  H01L21/285 ,  C23C16/455 ,  C23C16/52

Abstract: A method of forming a titanium nitride film includes: forming the titanium nitride film by alternately repeating supplying a raw material gas, which contains a titanium compound including chlorine and titanium, to a substrate accommodated in a processing container, and supplying a reaction gas, which contains a nitrogen compound including nitrogen and reacts with the titanium compound to form titanium nitride, to the substrate, wherein the forming the titanium nitride film is executed under a condition in which a pressure in the processing container is set within a range of 2.7 kPa to 12.6 kPa so that a specific resistance of the titanium nitride film becomes 57 micro-ohm-cm or less.

公开(公告)号：US20220189779A1

公开(公告)日：2022-06-16

申请号：US17593071

申请日：2020-03-04

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi TAKAHASHI ,  Yu NUNOSHIGE

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/505

Abstract: Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles.

公开(公告)号：US20200063258A1

公开(公告)日：2020-02-27

申请号：US16545588

申请日：2019-08-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tsuyoshi TAKAHASHI ,  Noboru MIYAGAWA ,  Susumu ARIMA ,  Seokhyoung HONG ,  Hiroaki ASHIZAWA

IPC: C23C16/455 ,  C23C16/34

Abstract: A method of forming a TiSiN film having a desired film characteristic includes: forming a TiN film by executing an operation of supplying, into a process container in which a substrate is accommodated, a Ti-containing gas and a nitrogen-containing gas in this order a number of times X, X being an integer of 1 or more; and forming a SiN film by executing an operation of supplying, into the process container, a Si-containing gas and a nitrogen-containing gas in this order a number of times Y, Y being an integer of 1 or more, wherein forming a TiN film and forming a SiN film are executed in this order a number of times Z, Z being an integer of 1 or more, and wherein, in forming a SiN film, a flow rate of the Si-containing gas is controlled to be a flow rate determined according to the desired film characteristic.

公开(公告)号：US20180112312A1

公开(公告)日：2018-04-26

申请号：US15784617

申请日：2017-10-16

Applicant: Tokyo Electron Limited

Inventor： Masaya ODAGIRI ,  Hirotaka KUWADA ,  Hiroki EHARA ,  Yukihiro TAMEGAI ,  Tsuyoshi TAKAHASHI ,  Hideo NAKAMURA ,  Kazuyoshi YAMAZAKI ,  Yoshikazu IDENO

IPC: C23C16/455 ,  C23C16/30

CPC classification number: C23C16/45548 ,  C23C16/303 ,  C23C16/34 ,  C23C16/448 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45574

Abstract: Disclosed is a film forming apparatus that forms a TiN film on a wafer by an ALD method. The film forming apparatus includes a chamber configured to accommodate the wafer, a gas supply mechanism configured to supply a titanium raw material gas including a TiCl4 gas, a nitriding gas including a NH3 gas, and a purge gas into the chamber, an exhaust mechanism configured to evacuate the inside of the chamber, and a controller configured to control the gas supply mechanism such that the TiCl4 gas and the NH3 gas are alternately supplied into the wafer. The gas supply mechanism has an NH3 gas heating unit configured to heat the NH3 gas to change a state of the NH3 gas and supplies the NH3 gas, the state of which is changed by the NH3 gas heating unit, into the chamber.