公开(公告)号：US20190212176A1

公开(公告)日：2019-07-11

申请号：US16238834

申请日：2019-01-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Risako MIYOSHI ,  Norihiko AMIKURA ,  Kazuyuki MIURA ,  Masaaki NAGASE ,  Satoru YAMASHITA ,  Yohei SAWADA ,  Kouji NISHINO ,  Nobukazu IKEDA

IPC: G01F1/50 ,  G01F25/00

CPC classification number: G01F1/50 ,  G01F25/0053

Abstract: A substrate processing system includes a gas supply unit having a first gas flow channel. A second gas flow channel of a flow rate measurement system is connected to the first gas flow channel. The flow rate measurement system further includes a third gas flow channel connected to the second gas flow channel, and a pressure sensor and a temperature sensor that measure a pressure and a temperature, respectively, in the third gas flow channel. In a method of an embodiment, a flow rate of a gas output from a flow rate controller of the gas supply unit is calculated using a build-up method. The flow rate of a gas is calculated without using the total volume of the first gas flow channel and the second gas flow channel and temperatures in the first gas flow channel and the second gas flow channel.