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公开(公告)号:US20180012735A1
公开(公告)日:2018-01-11
申请号:US15645521
申请日:2017-07-10
Applicant: TOKYO ELECTRON LIMITED
Inventor: Atsushi SAWACHI , Norihiko AMIKURA , Kouji NISHINO , Yohei SAWADA , Yoshiharu KISHIDA
Abstract: A gas supply system includes: a first flow channel connecting a first gas source and a chamber; a second flow channel connecting a second gas source and the first flow channel; a control valve, provided in the second flow channel, configured to control a flow rate of the second gas; an orifice provided downstream of the control valve and at a terminus of the second flow channel; a switching valve, provided at a connection point between the first flow channel and the terminus of the second flow channel, configured to control a supply timing of the second gas; an exhaust mechanism, connected to a flow channel between the control valve and the orifice in the second flow channel, configured to exhaust the second gas; and a controller configured to bring the control valve, the switching valve and the exhaust mechanism into operation.
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公开(公告)号:US20190212176A1
公开(公告)日:2019-07-11
申请号:US16238834
申请日:2019-01-03
Applicant: TOKYO ELECTRON LIMITED
Inventor: Risako MIYOSHI , Norihiko AMIKURA , Kazuyuki MIURA , Masaaki NAGASE , Satoru YAMASHITA , Yohei SAWADA , Kouji NISHINO , Nobukazu IKEDA
CPC classification number: G01F1/50 , G01F25/0053
Abstract: A substrate processing system includes a gas supply unit having a first gas flow channel. A second gas flow channel of a flow rate measurement system is connected to the first gas flow channel. The flow rate measurement system further includes a third gas flow channel connected to the second gas flow channel, and a pressure sensor and a temperature sensor that measure a pressure and a temperature, respectively, in the third gas flow channel. In a method of an embodiment, a flow rate of a gas output from a flow rate controller of the gas supply unit is calculated using a build-up method. The flow rate of a gas is calculated without using the total volume of the first gas flow channel and the second gas flow channel and temperatures in the first gas flow channel and the second gas flow channel.
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