公开(公告)号：US20220199415A1

公开(公告)日：2022-06-23

申请号：US17553879

申请日：2021-12-17

Applicant: Tokyo Electron Limited

Inventor： Yusuke TAKINO ,  Takayuki HOSHI

IPC: H01L21/3065 ,  H01L21/308 ,  H01J37/32

Abstract: A plasma processing method includes: (a) providing a substrate having an etching target film with a recess formed therein, on a substrate support; (b) forming a protective film on a side wall of the recess; (c) after (b), generating plasma from a processing gas to etch a bottom of the recess; and (d) performing a sequence including (b) and (c) one or more times. The step (c) includes a first stage of etching the bottom of the recess while suppressing a formation of a shoulder portion caused when reaction by-products produced by the etching adhere to the side wall, and a second stage of further etching the bottom of the recess in a state where a temperature of the substrate support is controlled to −40° C. or lower, after the first stage.

公开(公告)号：US20210384039A1

公开(公告)日：2021-12-09

申请号：US17409645

申请日：2021-08-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki HOSHI ,  Masanobu HONDA ,  Masahiro TABATA ,  Toru HISAMATSU

IPC: H01L21/311

Abstract: An etching method includes a step of selectively forming deposit on a top surface of a mask disposed on a film of a substrate, a step of etching the film after the step of forming the deposit, a step of forming a layer of chemical species included in plasma of a processing gas, on the substrate, and a step of supplying ions from plasma of an inert gas to the substrate so that the chemical species react with the film.

公开(公告)号：US20200234970A1

公开(公告)日：2020-07-23

申请号：US16746106

申请日：2020-01-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki HOSHI ,  Masanobu HONDA ,  Masahiro TABATA ,  Toru HISAMATSU

IPC: H01L21/311

Abstract: An etching method includes a step of selectively forming deposit on a top surface of a mask disposed on a film of a substrate, a step of etching the film after the step of forming the deposit, a step of forming a layer of chemical species included in plasma of a processing gas, on the substrate, and a step of supplying ions from plasma of an inert gas to the substrate so that the chemical species react with the film.