公开(公告)号：US09640388B2

公开(公告)日：2017-05-02

申请号：US15043242

申请日：2016-02-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru Kasai ,  Kotaro Miyatani ,  Takuya Kurotori ,  Kenichi Kote ,  Yutaka Fujino ,  Akira Tanihara ,  Kohei Kawamura

IPC: H01L21/00 ,  H01L21/02

CPC classification number: H01L21/02345 ,  H01L21/0212 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/02315

Abstract: In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.