公开(公告)号：US20240355909A1

公开(公告)日：2024-10-24

申请号：US18760217

申请日：2024-07-01

申请人： Micron Technology, Inc.

发明人： Masihhur R. Laskar ,  Jeffery B. Hull ,  Hung-Wei Liu

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H10B51/30

CPC分类号： H01L29/66553 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/02345 ,  H01L29/66666 ,  H01L29/6684 ,  H01L29/7827 ,  H01L29/78391 ,  H10B51/30

摘要： Integrated circuitry comprises an electronic component. Insulative silicon dioxide is adjacent the electronic component. The insulative silicon dioxide has at least one of (a) and (b), where: (a): an average concentration of elemental-form H of 0.002 to 0.5 atomic percent; and (b): an average concentration of elemental-form N of 0.005 to 0.3 atomic percent. Other embodiments, including method, are disclosed.

公开(公告)号：US20240063028A1

公开(公告)日：2024-02-22

申请号：US18022625

申请日：2021-08-12

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Shunichi ITO ,  Yoshihiro KAMATSU ,  Shinobu KAWAGUCHI ,  Shinya SASAGAWA

IPC分类号： H01L21/477 ,  H01L21/02

CPC分类号： H01L21/477 ,  H01L21/02345 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/02554 ,  H01L21/02181 ,  H01L21/02565 ,  H01L21/02631

摘要： A semiconductor device in which variation in characteristics is small is provided. A first insulator is formed; a first insulator is formed; a conductor is formed over the first insulator; a second insulator is formed over the conductor; a third insulator is formed over the second insulator; an oxide is formed over the third insulator; first heat treatment is performed; and second heat treatment following the first heat treatment is performed. The temperature of the first heat treatment is lower than the temperature of the second heat treatment.

公开(公告)号：US20230197463A1

公开(公告)日：2023-06-22

申请号：US17645352

申请日：2021-12-21

申请人： CANON KABUSHIKI KAISHA

发明人： Ozkan Ozturk ,  Alireza Aghili

IPC分类号： H01L21/3105 ,  H01L21/67 ,  H01L21/02

CPC分类号： H01L21/31051 ,  H01L21/02345 ,  H01L21/6715 ,  H01L21/67092

摘要： An apparatus includes a first substrate chuck configured to hold a first substrate, a second substrate chuck configured to hold a second substrate, and a dispenser configured to dispense a formable material onto the first substrate while the first substrate overlies the first substrate chuck and to dispensing the formable material onto the second substrate while the second substrate overlies the second substrate chuck. A method of forming a planarization layer on a substrate can use the apparatus. A method of making an article can include the method of forming the planarization layer.

公开(公告)号：US20180337058A1

公开(公告)日：2018-11-22

申请号：US15599851

申请日：2017-05-19

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Han LAI ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC分类号： H01L21/308

CPC分类号： H01L21/3081 ,  B05D3/06 ,  B05D3/108 ,  C08L33/10 ,  C08L33/12 ,  C09D133/08 ,  C09D133/10 ,  C09D133/12 ,  C09D135/02 ,  G03F7/11 ,  H01L21/02318 ,  H01L21/02345 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/3086 ,  H01L21/3105

摘要： Provided is a material composition and method for that includes providing a primer material including a surface interaction enhancement component, and a cross-linkable component. A cross-linking process is performed on the deposited primer material. The cross-linkable component self-cross-links in response to the cross-linking process to form a cross-linked primer material. The cross-lined primer material can protect an underlying layer while performing at least one process on the cross-linked primer material.

公开(公告)号：US20180202071A1

公开(公告)日：2018-07-19

申请号：US15851252

申请日：2017-12-21

申请人： SCREEN HOLDINGS CO., LTD.

发明人： Hikaru Kawarazaki ,  Akitsugu Ueda

IPC分类号： C30B33/02 ,  H01L21/02 ,  H01L31/18 ,  H01L21/28 ,  H01L21/311

CPC分类号： C30B33/02 ,  C30B1/02 ,  C30B29/16 ,  H01L21/02181 ,  H01L21/02345 ,  H01L21/02381 ,  H01L21/02609 ,  H01L21/2686 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68707 ,  H01L21/6875 ,  H01L21/68757 ,  H01L31/182 ,  H01L51/0512 ,  H01L51/0545 ,  Y02P70/521

摘要： A hafnium oxide film is deposited on a front surface of a substrate across a boundary layer film. By preheating the substrate on which the hafnium oxide film is formed, and then, irradiating the front surface of the substrate with intense flash light over an extremely short radiation time, only the front surface of the substrate is instantaneously heated and is rapidly thermally expanded. At this instant, a strong compressive stress is applied to the front surface of the substrate, and a tensile stress is applied to a back surface. By heating the hafnium oxide film and applying a strong compressive stress to the hafnium oxide film at the same time, the proportion of a cubic structure in a crystal structure of the hafnium oxide film can be increased, and the crystal structure occurring in the hafnium oxide film can be adjusted.

公开(公告)号：US09960035B2

公开(公告)日：2018-05-01

申请号：US15399614

申请日：2017-01-05

申请人： Applied Materials, Inc.

发明人： Loke Yuen Wong ,  Ke Chang ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Glen T. Mori ,  Aksel Kitowski ,  Arkajit Roy Barman

IPC分类号： H01L21/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/67 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511

CPC分类号： H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

摘要： Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

公开(公告)号：US20180068847A1

公开(公告)日：2018-03-08

申请号：US15798743

申请日：2017-10-31

申请人： SCREEN Holdings Co., Ltd.

发明人： Hikaru KAWARAZAKI

IPC分类号： H01L21/02

CPC分类号： H01L21/02345 ,  F27B17/0025 ,  F27D11/00 ,  H01L21/02247 ,  H01L21/02255 ,  H01L21/02329

摘要： A substrate in which a high-dielectric-constant gate insulator is formed on a silicon substrate with an interface layer film sandwiched in between is housed in a chamber. The method of the invention including: (a) housing the substrate in a chamber; (b) supplying ammonia to the chamber to foam an ammonia atmosphere; and (c) applying flash light to a surface of the substrate housed in the chamber to heat the high dielectric constant film, wherein the flash light applied in said step (c) has a spectral distribution that has a peak in a wavelength range of 200 to 300 nm.

公开(公告)号：US20170125408A1

公开(公告)日：2017-05-04

申请号：US15335984

申请日：2016-10-27

申请人： Samsung Electronics Co., Ltd.

发明人： Moon-Kyu PARK ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC分类号： H01L27/088 ,  H01L29/49 ,  H01L21/8234 ,  H01L29/78

CPC分类号： H01L27/088 ,  H01L21/02345 ,  H01L21/02356 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823456 ,  H01L21/823462 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/435 ,  H01L29/4941 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7854 ,  H01L29/7856

摘要： Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

公开(公告)号：US20170076975A1

公开(公告)日：2017-03-16

申请号：US15359724

申请日：2016-11-23

申请人： Samsung Electronics Co., Ltd.

发明人： WOOKYUNG YOU ,  JONGMIN BAEK ,  SANGHOON AHN ,  SANGHO RHA ,  NAEIN LEE

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/76834 ,  H01L21/76877 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure describes semiconductor devices and methods of fabricating the same. The method includes forming an interlayer insulating layer on a substrate and forming conductive patterns in the interlayer insulating layer. A pore density of an upper portion of the interlayer insulating layer is higher than that of a lower portion of the interlayer insulating layer, and a pore density of an intermediate portion of the interlayer insulating layer gradually increases toward the upper portion of the interlayer insulating layer. An air gap is provided between the conductive patterns.

摘要翻译： 本公开描述了半导体器件及其制造方法。 该方法包括在衬底上形成层间绝缘层，并在层间绝缘层中形成导电图案。 层间绝缘层的上部的孔密度高于层间绝缘层的下部的孔密度，层间绝缘层的中间部分的孔密度朝向层间绝缘层的上部逐渐增加 。 在导电图案之间设置气隙。

公开(公告)号：US09595436B2

公开(公告)日：2017-03-14

申请号：US14425578

申请日：2013-10-24

申请人： Applied Materials, Inc.

发明人： Cara Beasley ,  Ralf Hofmann ,  Majeed A. Foad

IPC分类号： B05D5/12 ,  H01L21/02 ,  B05D3/06 ,  B05D3/14

CPC分类号： H01L21/02376 ,  B05D3/061 ,  B05D3/065 ,  B05D3/141 ,  B05D5/12 ,  C01B32/182 ,  C01B32/184 ,  C01B32/186 ,  C01B32/20 ,  H01L21/02318 ,  H01L21/0234 ,  H01L21/02345 ,  H01L21/0237 ,  H01L21/02527 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/288

摘要： Embodiments described herein provide methods and apparatus for forming graphitic carbon such as graphene on a substrate. The method includes providing a precursor comprising a linear conjugated hydrocarbon, depositing a hydrocarbon layer from the precursor on the substrate, and forming graphene from the hydrocarbon layer by applying energy to the substrate. The precursor may include template molecules such as polynuclear aromatics, and may be deposited on the substrate by spinning on, by spraying, by flowing, by dipping, or by condensing. The energy may be applied as radiant energy, thermal energy, or plasma energy.

摘要翻译： 本文所述的实施方案提供了在基底上形成石墨碳如石墨烯的方法和装置。 该方法包括提供包含线性共轭烃的前体，在基底上沉积来自前体的烃层，以及通过向基底施加能量从烃层形成石墨烯。 前体可以包括模板分子，例如多核芳族化合物，并且可以通过旋转，喷雾，通过浸渍，或通过冷凝沉积在基材上。 能量可以作为辐射能，热能或等离子体能量施加。