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公开(公告)号：US20210388493A1
公开(公告)日：2021-12-16
申请号：US17338128
申请日：2021-06-03
发明人： Yuta SORITA , Tetsuya SAITO , Shigeyuki OKURA , Yuichi FURUYA , Masamichi HARA
IPC分类号： C23C16/44 , C23C16/46 , C23C16/54 , C23C16/16 , C23C16/455
摘要： A film forming apparatus for forming a film on a substrate includes a chamber, a substrate support, a gas supply unit, a gas injection member, and a filter. The substrate support is disposed in the chamber to support a substrate placed thereon and maintain the substrate at a film forming temperature. The gas supply unit is configured to supply a gas containing a film forming source gas. The gas injection member is disposed to face the substrate support and has a gas injection area for injecting the gas containing the film forming source gas supplied from the gas supply unit. Further, the filter is disposed to cover at least the gas injection area on a surface of the gas injection member opposite to a surface facing the substrate support, the filter being configured to trap particles in the gas containing the film forming source gas while the gas passes therethrough.
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公开(公告)号：US20220148980A1
公开(公告)日：2022-05-12
申请号：US17594224
申请日：2020-03-25
IPC分类号： H01L23/00 , H01L21/56 , C23C16/50 , C23C16/52 , C23C16/458
摘要： A film forming apparatus includes: a processing container; a stage arranged inside the processing container and configured to place a substrate thereon, the stage including a plurality of film forming portions configured to form a film on a back surface of the substrate opposite to a surface of the substrate on which an element is formed, with a material gas supplied to the back surface via a supply port having a shape forming at least a portion of a film forming pattern for reducing stress applied to the substrate; and a control device configured to independently control film formations on the back surface by the plurality of film forming portions.
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