摘要:
There is provided a substrate processing system which includes: at least two transfer chambers disposed adjacent each other, each of which including a transfer mechanism configured to transfer a substrate; at least one process chamber connected to each of the at least two transfer chambers, and configured to perform a process on the substrate loaded into the at least one process chamber; a gate valve configured to move into and out of a connection path interconnecting the at least two transfer chambers and configured to separate the at least two transfer chambers from each other; and a substrate holding mechanism attached to the gate valve and configured to hold the substrate.
摘要:
A cooling processing apparatus includes: a processing vessel; an electrostatic chuck installed in the processing vessel, the electrostatic chuck having a mounting surface on which an object to be processed is mounted; a cooling mechanism configured to cool the electrostatic chuck; and a lamp heating device configured to remove moisture attached to the mounting surface. Further, a method for operating the cooling processing apparatus includes: decompressing the space in the processing vessel by using the exhaust device; removing the moisture attached to the mounting surface of the electrostatic chuck by using the lamp heating device; and cooling the electrostatic chuck by using the cooling mechanism after the removal of the moisture performed by the lamp heating device is terminated.
摘要:
Provided is a load lock device which includes: a container with an opening formed therein and configured to be selectively maintained at an atmospheric environment and a vacuum atmosphere; a holding unit arranged within the container and configured to hold objects to be processed; an elevation mechanism configured to vertically move the holding unit; and a pressure regulating mechanism configured to vacuum-evacuate the container through the opening of the container. The elevation mechanism includes at least two vertically-extended elevation shaft members connected to the holding unit; and a drive unit configured to vertically move the elevation shaft members. The elevation shaft members are arranged opposite each other with the opening interposed therebetween.
摘要:
A film forming apparatus for forming a film on a substrate includes a chamber, a substrate support, a gas supply unit, a gas injection member, and a filter. The substrate support is disposed in the chamber to support a substrate placed thereon and maintain the substrate at a film forming temperature. The gas supply unit is configured to supply a gas containing a film forming source gas. The gas injection member is disposed to face the substrate support and has a gas injection area for injecting the gas containing the film forming source gas supplied from the gas supply unit. Further, the filter is disposed to cover at least the gas injection area on a surface of the gas injection member opposite to a surface facing the substrate support, the filter being configured to trap particles in the gas containing the film forming source gas while the gas passes therethrough.
摘要:
A trap mechanism for trapping exhaust gas from a process chamber. The trap assembly includes a housing containing a plurality of trap units. The plurality of trap units are arranged successively along a flow direction of said exhaust gas. Each trap unit includes a set of trap panels parallel to each other and spaced apart from each other. The two opposite surfaces with a larger area of each trap panel are oriented substantially parallel to a flow direction of the exhaust gas flow. The two opposite surfaces with a smaller area of each trap panels are oriented orthogonal to the exhaust gas flow.
摘要:
In a substrate processing apparatus for processing a substrate, a processing chamber accommodating the substrate is provided. A mounting table is disposed in the processing chamber and configured to attract and hold the substrate using an electrostatic attractive force. A charge amount measurement unit is disposed in the processing chamber and configured to measure charge amount of a substrate attraction surface of the mounting table. A charge neutralization mechanism is configured to neutralize the substrate attraction surface of the mounting table. A retreating mechanism is configured to make the charge amount measurement unit retreat from a measurement position facing the substrate attraction surface of the mounting table.
摘要:
A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.