公开(公告)号：US20210280397A1

公开(公告)日：2021-09-09

申请号：US17191085

申请日：2021-03-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoichi KUROSAWA ,  Shoichiro MATSUYAMA ,  Yasuharu SASAKI ,  Chishio KOSHIMIZU

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/67

Abstract: A plasma processing apparatus includes a chamber, a stage, a semiconductive ring, a power source, at least one conductive member, and a conductive layer. The chamber has a plasma processing space. The stage is disposed in the plasma processing space and has an electrostatic chuck. The semiconductive ring is disposed on the stage so as to surround a substrate placed on the stage, the semiconductive ring having a first face. The at least one conductive member is disposed in the stage and in electrical connection with the power source. The conductive layer is disposed on the first face of the semiconductive ring and in electrical connection with the at least one conductive member.