公开(公告)号：US10957535B2

公开(公告)日：2021-03-23

申请号：US16409199

申请日：2019-05-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka Motoyama ,  Younggi Hong

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/762 ,  C23C16/52 ,  C23C16/56 ,  C23C16/24 ,  C23C16/04 ,  C23C16/40 ,  H01L21/768 ,  H01L21/76 ,  H01L21/3065

Abstract: There is provided a method of forming a semiconductor film, including: a first process of supplying a first semiconductor raw material gas onto a substrate having recesses formed therein to form a first semiconductor film in each of the recesses, each of the recesses being covered with an insulating film; a second process of supplying a halogen-containing etching gas onto the substrate to etch the first semiconductor film while exposing a surface of the insulating film in an upper portion of an inner wall of each of the recesses and leaving the first semiconductor film formed on a bottom surface of each of the recesses; and a third process of simultaneously supplying a halogen-containing semiconductor gas and a semiconductor hydride gas onto the substrate to form a second semiconductor film on the first semiconductor film formed on the bottom surface of each of the recesses.