公开(公告)号：US11367611B2

公开(公告)日：2022-06-21

申请号：US16357292

申请日：2019-03-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuji Nishino ,  Jun Sato

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/40 ,  H01L21/02 ,  H01L21/687 ,  H01J37/32

Abstract: There is provided a film forming method of embedding a film in a groove formed in a front surface of a substrate, which includes: depositing an in-conformal film in the groove formed in the front surface of the substrate while forming a V-like cross-sectional shape in the groove; and embedding a conformal film in the groove by depositing the conformal film.

公开(公告)号：US11264266B2

公开(公告)日：2022-03-01

申请号：US16735889

申请日：2020-01-07

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Yuji Nishino

IPC: H01L21/687 ,  H01L21/02

Abstract: A substrate processing method is implemented in a substrate processing apparatus including a processing chamber, a turntable on which a substrate is placed inside the processing chamber, and first and second gas supplies that supply first and second gases, respectively. The substrate processing method deposits a film, generated by a reaction between the first gas and the second gas, on the substrate in a first state where the substrate rotates and the turntable undergoes a clockwise orbital rotation around a rotating shaft so that the substrate passes through a region supplied with the first gas and thereafter passes through a region supplied with the second gas, and deposits the film on the substrate in a second state where the substrate rotates and the turntable undergoes a counterclockwise orbital rotation.