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公开(公告)号:US10534264B2
公开(公告)日:2020-01-14
申请号:US15879206
申请日:2018-01-24
发明人: Tsuyoshi Nakamura , Kazuishi Tanno , JunYeob Lee
IPC分类号: G03F7/004 , G03F7/30 , G03F7/38 , C08F224/00 , C08F232/02 , C08F232/04 , C08F232/08 , G03F7/039 , G03F7/038 , G03F7/16 , G03F7/20 , G03F7/32 , C08F220/16 , C08F220/28
摘要: A resist composition which generates an acid through exposure and whose solubility in a developer changes by the action of an acid. The resist composition contains a polymer compound having at least two kinds of specific constituent units. A resist pattern forming method, including forming a resist film on a support using the resist composition, subjecting the resist film to exposure, and forming a resist pattern through patterning by developing the resist film having undergone exposure by using a developer.
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公开(公告)号:US20210397086A1
公开(公告)日:2021-12-23
申请号:US17273669
申请日:2019-08-29
发明人: Tsuyoshi NAKAMURA , Yosuke SUZUKI , JunYeob Lee
摘要: A resist composition including a base material component (A), an acid generator component (B), and a mixed solvent (S) in which an organic solvent (S1) represented by Formula (s1) is mixed, in which the acid generator component (B) contains a compound (B1) represented by Formula (b1). In the formula, Rb1 represents an aryl group. Rb2 and Rb3 each independently represent an aliphatic hydrocarbon group. Lb1, Lb2, and Lb3 each independently represent a divalent linking group or a single bond. X− represents a counter anion. R1 and R2 each independently represent an alkyl group having 1 to 6 carbon atoms
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公开(公告)号:US11150554B2
公开(公告)日:2021-10-19
申请号:US15766734
申请日:2016-10-13
发明人: Tsuyoshi Nakamura , Kazuishi Tanno , JunYeob Lee
摘要: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including at least one acid generator (B1) represented by general formula (b1) shown below, at least one acid generator (B2) represented by general formula (b2) shown below, and at least one acid generator (B3) represented by general formula (b3) shown below (wherein IV to R3 each independently represents a cyclic group which may have a substituent, a chain alkyl group, or a chain alkenyl group; Y1 represents a single bond or a divalent linking group containing an oxygen atom; M1+ to M3+ represents a monovalent organic cation; n represents an integer of 1 to 4; m represents an integer of 0 to 4; provided that, when m is 0, the carbon atom adjacent to the sulfur atom within R2 has no fluorine atom bonded thereto). R1—Y1—(CF2)n—SO3−M1+ (b1) R2—(CH2)m—SO3−M2+ (b2) R3—COO−M3+ (b3)
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公开(公告)号:US10534263B2
公开(公告)日:2020-01-14
申请号:US15848404
申请日:2017-12-20
发明人: Tsuyoshi Nakamura , Kazuishi Tanno , JunYeob Lee
IPC分类号: G03F7/004 , G03F7/30 , C08F220/28 , C08F222/10 , C08F224/00 , C08F232/02 , C08F232/08 , G03F7/039 , G03F7/038 , G03F7/16 , G03F7/20 , G03F7/32 , C08F220/16 , C08F220/38 , G03F7/38
摘要: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, which includes a polymeric compound having at least two specific structural units.
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