RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

    公开(公告)号:US20210397086A1

    公开(公告)日:2021-12-23

    申请号:US17273669

    申请日:2019-08-29

    IPC分类号: G03F7/004 G03F7/20 G03F7/26

    摘要: A resist composition including a base material component (A), an acid generator component (B), and a mixed solvent (S) in which an organic solvent (S1) represented by Formula (s1) is mixed, in which the acid generator component (B) contains a compound (B1) represented by Formula (b1). In the formula, Rb1 represents an aryl group. Rb2 and Rb3 each independently represent an aliphatic hydrocarbon group. Lb1, Lb2, and Lb3 each independently represent a divalent linking group or a single bond. X− represents a counter anion. R1 and R2 each independently represent an alkyl group having 1 to 6 carbon atoms

    Resist composition and method of forming resist pattern

    公开(公告)号:US11150554B2

    公开(公告)日:2021-10-19

    申请号:US15766734

    申请日:2016-10-13

    摘要: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including at least one acid generator (B1) represented by general formula (b1) shown below, at least one acid generator (B2) represented by general formula (b2) shown below, and at least one acid generator (B3) represented by general formula (b3) shown below (wherein IV to R3 each independently represents a cyclic group which may have a substituent, a chain alkyl group, or a chain alkenyl group; Y1 represents a single bond or a divalent linking group containing an oxygen atom; M1+ to M3+ represents a monovalent organic cation; n represents an integer of 1 to 4; m represents an integer of 0 to 4; provided that, when m is 0, the carbon atom adjacent to the sulfur atom within R2 has no fluorine atom bonded thereto). R1—Y1—(CF2)n—SO3−M1+  (b1) R2—(CH2)m—SO3−M2+  (b2) R3—COO−M3+  (b3)