公开(公告)号：US20240360267A1

公开(公告)日：2024-10-31

申请号：US18636069

申请日：2024-04-15

申请人： TOKYO OHKA KOGYO CO., LTD. ,  TOKYO INSTITUTE OF TECHNOLOGY

发明人： Takehiro SESHIMO ,  Takahiro DAZAI ,  Teruaki HAYAKAWA ,  Shinsuke MAEKAWA ,  Ryota UEHARA

IPC分类号： C08F297/02

CPC分类号： C08F297/026

摘要： A resin composition for forming an etching mask pattern, with which a phase-separated structure having a period (L0) of less than 20 nm and having excellent vertical orientation even when subjected to high-temperature annealing can be obtained; and a method for manufacturing an etching mask pattern. The method includes applying the resin composition onto a support to form a block copolymer layer having a film thickness of 25 nm or more and phase-separating the block copolymer layer. The resin composition contains a block copolymer having a first block and a second block, the first block includes a structure of General Formula (b1), and the second block consists of a block 2M of a structure of General Formula (b2m) and a block 2G of a structure of General Formula (b2g), and y/(y+z) is 0.01 or more and 0.11 or less; R1 is an alkyl group, R2 is an alkyl group; and R3 is an alkylene group