公开(公告)号：US20220404693A1

公开(公告)日：2022-12-22

申请号：US17772340

申请日：2020-10-16

Applicant: TOPPAN INC.

Inventor： Kenjiro ICHIKAWA ,  Ayumi GODA ,  Hideaki NAKANO

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/48

Abstract: There are provided a reflective mask having a coating film uniformly formed along the outermost surface and the side surfaces of a transfer pattern, having high EUV transmittance, and having high cleaning resistance and a production method therefor. To achieve the object, for example, a reflective mask (100) includes: a substrate (1); a multilayer reflective film (2) formed on the substrate (1) and reflecting an incident EUV light; an absorption layer (4) formed on at least a part of the multilayer reflective film (2) and absorbing the incident EUV light; and a coating film (5) formed on the multilayer reflective film (2) and on the absorption layer (4) and transmitting the incident EUV light, in which the coating film (5) has an extinction coefficient k of 0.04 or less to the EUV light, is resistant to cleaning with a cleaning chemical solution, and is formed with a uniform film thickness on the surface and the side surfaces of the absorption layer (4).

公开(公告)号：US20230147988A1

公开(公告)日：2023-05-11

申请号：US17920386

申请日：2021-04-28

Applicant: TOPPAN INC.

Inventor： Hideaki NAKANO ,  Ayumi GODA ,  Kenjiro ICHIKAWA

IPC: G03F1/54 ,  G03F1/24

CPC classification number: G03F1/54 ,  G03F1/24

Abstract: The present invention is intended to provide a reflective photomask blank and a reflective photomask that suppress or reduce a shadowing effect of a reflective photomask for pattern transfer using light with a wavelength in an extreme ultraviolet region as a light source and that have hydrogen radical resistance. A reflective photomask blank (10) according to an embodiment of the present invention is a reflective photomask blank for producing a reflective photomask for pattern transfer using extreme ultraviolet light as a light source, and includes a substrate (1), a reflective layer (2) including a multi-layer film formed on the substrate (1), and an absorption layer (4) formed on the reflective layer (2). The absorption layer (4) is formed of a material containing a total of 50 atomic % or more of indium (In) and oxygen (O). An atomic number ratio (O/In) of oxygen (O) to indium (In) in the absorption layer (4) exceeds 1.5, and a film thickness of the absorption layer (4) is in a range of from 17 nm to 45 nm.