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公开(公告)号:US20230412934A1
公开(公告)日:2023-12-21
申请号:US18460743
申请日:2023-09-05
Applicant: TOPPAN Inc.
Inventor: Yu OOKUBO , Tomohiro NAKAGOME , Kunihiro HATAKEYAMA , Hiroshige GOTO , Satoshi TAKAHASHI , Yasuyuki HITSUOKA
Abstract: A range imaging device includes a light source unit that emits light pulses to a measurement space; a light-receiving unit including a photoelectric conversion element that generates charge according to light incident from the space, a pixel circuit including charge storage units in which the charge is integrated in a frame cycle, and a pixel drive circuit that performs switching operation of transfer transistors to distribute the charge to the storage units for integration at integration timing synchronizing with emission of the pulses; and a distance calculation unit that calculates a distance between object in the space and the light-receiving unit based on charge determined by a first charge integrated in each storage unit. The calculation unit calculates the distance by subtracting a second charge from each first charge, the second charge being noise charge as an integrated charge other than the charge distributed and integrated by the switching operation.
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公开(公告)号:US20230367018A1
公开(公告)日:2023-11-16
申请号:US18357546
申请日:2023-07-24
Applicant: TOPPAN Inc.
Inventor: Tomohiro NAKAGOME , Yu OOKUBO , Satoshi TAKAHASHI , Hiroshige GOTO
IPC: G01S17/894 , G01S7/4865 , G01S17/10
CPC classification number: G01S17/894 , G01S7/4865 , G01S17/10
Abstract: A range imaging device includes a light source unit, a light-receiving unit, and a range image processing unit that computes a distance to an object. The range image processing unit performs multiple measurements different in relative timing relationship between an emission timing and an accumulation timing, extracts a feature amount based on the amounts of charge accumulated at the measurements, determines whether reflection light of a light pulse has been received by pixels in a single path or via multipath propagation, based on tendency of the extracted feature amount, and calculates the distance to the object present in a measurement space in accordance with a result of the determination.
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公开(公告)号:US20230014856A1
公开(公告)日:2023-01-19
申请号:US17935336
申请日:2022-09-26
Applicant: TOPPAN Inc.
Inventor: Hiroshige GOTO
IPC: H01L27/146 , H04N5/3745 , H04N5/357
Abstract: A solid-state image sensor includes a first semiconductor, and a second semiconductor having a composition different from that of the first composition and electrically connected to the first semiconductor. The first semiconductor includes a photodiode that converts light incident on the photodiode into charge carriers, first carrier storages that store the charge carriers, and a transfer gate that controls transfer the charge carriers to a selected one of the first carrier storages. The second semiconductor includes second carrier storages and a potential detection node. The second carrier storages each store charge carriers based on the charge carriers stored in a corresponding one of the first carrier storages. The potential detection node detects the electric potential of each of the second carrier storages. The solid-state image sensor further includes a reset transistor that resets the electric potential of each of the first carrier storages to a predetermined electric potential.
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