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公开(公告)号:US10600803B2
公开(公告)日:2020-03-24
申请号:US16120412
申请日:2018-09-03
IPC分类号: H01L27/11582 , H01L27/11565 , H01L27/1157 , H01L27/11575 , H01L27/11519 , H01L23/532 , G11C16/26 , G11C16/04 , G11C16/08
摘要: A semiconductor memory device includes first and second wiring layers above a semiconductor substrate, a memory pillar extending through the first and second wiring layers, a first plug contacting the first wiring layer, a second plug contacting the second wiring layer, a first pillar adjacent to the first plug and extending through the first wiring layer, and a second pillar adjacent to the second plug and extending through the first and second wiring layers. The memory pillar includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, and a third insulating layer, a charge storage layer, and a fourth insulating layer on a side surface of the second semiconductor layer. The distance between the center of the first plug and the center of the first pillar is greater than the distance between the center of the second plug and the center of the second pillar.
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公开(公告)号:US20190123055A1
公开(公告)日:2019-04-25
申请号:US16131735
申请日:2018-09-14
发明人: Akira Matsumura
IPC分类号: H01L27/1157 , H01L27/11582
摘要: A semiconductor memory device includes a substrate, a stacked body and a columnar part. The stacked body is provided above the substrate, and the columnar part is provided inside the stacked body. The stacked body includes a first stacked body including first electrode layers stacked in a first direction, and the second stacked body including second electrode layers stacked in the first direction, and a third electrode layer between the first stacked body and the second stacked body. The columnar part includes a first columnar part inside the first stacked body, a second columnar part inside the second stacked body, and a linking portion between the first and second columnar parts. The linking portion includes a first portion having a first thickness in a second direction crossing the first direction. The first thickness is wider than a thickness in the second direction of other portion in the linking portion.
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