公开(公告)号：US20190287989A1

公开(公告)日：2019-09-19

申请号：US16109381

申请日：2018-08-22

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masaharu MIZUTANI ,  Yoichi MINEMURA

IPC: H01L27/11582 ,  H01L27/11568 ,  H01L29/78

Abstract: A semiconductor device includes a base, a stacked body, a plate-shaped portion, and first to third columnar portions. The stacked body is provided over the base. The plate-shaped portion is inside the stacked body from an upper end of the stacked body to the base. The first to third columnar portions are inside the stacked body from the upper end of the stacked body to the base. The second columnar portion is located away from the first columnar portion in a first direction. The third columnar portion is aligned with the first columnar portion and the second columnar portion in the first direction. A pitch between the third columnar portion and the first columnar portion is a first pitch. A pitch between the third columnar portion and the second columnar portion is a second pitch larger than the first pitch.