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公开(公告)号：US10662507B2
公开(公告)日：2020-05-26
申请号：US15439004
申请日：2017-02-22
发明人： Hidenari Yamamoto , Hiroyuki Suto
摘要： A method for producing a thermoelectric material, comprising: mixing an Sn powder and a powder containing a first dopant element to obtain a first mixed raw material, heating the first mixed raw material at a temperature allowing for mutual diffusion of Sn and the first dopant element to obtain a first aggregate, pulverizing the first aggregate to obtain a first powder, mixing an Mg powder, an Si powder, and the first powder to obtain a second mixed raw material, heating the second mixed raw material at a temperature allowing for mutual diffusion of Mg, Si, Sn and the first dopant element to obtain a second aggregate, pulverizing the second aggregate to obtain a second powder, and pressure-sintering the second powder, and wherein the first dopant element is one or more elements selected from Al, Ag, As, Bi, Cu, Sb, Zn, P, and B.
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公开(公告)号：US10892395B2
公开(公告)日：2021-01-12
申请号：US15936658
申请日：2018-03-27
发明人： Shinsuke Hirono , Hiroyuki Suto
摘要： To provide a thermoelectric conversion material having an enhanced thermoelectromotive force and a production method thereof. A thermoelectric conversion material including a matrix and a barrier material, wherein the matrix contains Mg2Si1-xSnx (x is from 0.50 to 0.80) and an n-type dopant and the barrier material contains Mg2Si1-ySny (y is from 0 to 0.30), and a production method thereof. A thermoelectric conversion material and a production method thereof, in which the movement of minority carrier is blocked by a barrier material and the thermoelectromotive force is thereby enhanced, can be provided.
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公开(公告)号：US10103312B2
公开(公告)日：2018-10-16
申请号：US15585886
申请日：2017-05-03
发明人： Hiroyuki Suto , Hidenari Yamamoto
摘要： A thermoelectric conversion device including an n-type thermoelectric converter, a p-type thermoelectric converter, a high temperature-side electrode with which one end of the n-type thermoelectric converter and one end of the p-type thermoelectric converter are put into contact, a first low temperature-side electrode in contact with another end of the n-type thermoelectric converter, and a second low temperature-side electrode in contact with another end of the p-type thermoelectric converter, wherein in the n-type thermoelectric converter, the side in contact with the high temperature-side electrode is composed of a carrier generation semiconductor containing Mg2Sn, and in the n-type thermoelectric converter, the side in contact with the first low temperature-side electrode is composed of a carrier transfer semiconductor containing Mg2Si1-xSnx, wherein 0.6≤x≤0.7, and a first n-type dopant.
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