公开(公告)号：US20100012996A1

公开(公告)日：2010-01-21

申请号：US12174067

申请日：2008-07-16

Applicant: TSUNG DE LIN

Inventor： TSUNG DE LIN

IPC: H01L29/94

CPC classification number: H01L27/10855 ,  H01L21/76889

Abstract: A dynamic random access memory structure comprises a substrate having a first diffusion region and a second diffusion region, a dielectric structure overlaying the substrate, a capacitor contact plug disposed in the dielectric structure and connected to the first diffusion region, a bit-line contact plug disposed in the dielectric structure and connected to the second diffusion region, a metal silicide disposed on the capacitor contact plug, and a capacitive structure disposed on the dielectric structure and connected to the metal silicide.

Abstract translation: 动态随机存取存储器结构包括具有第一扩散区和第二扩散区的衬底，覆盖衬底的电介质结构，设置在电介质结构中并连接到第一扩散区的电容器接触插塞，位线接触插塞 设置在电介质结构中并连接到第二扩散区，设置在电容器接触插塞上的金属硅化物，以及设置在电介质结构上并连接到金属硅化物的电容结构。