摘要:
In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.
摘要:
There is provided a ferrite core material for an electrophotographic developer, the ferrite core material having a ferrite particle composition represented by the formula (1) shown below, containing SrO replacing a part of (MnO) and/or (MgO) in the formula (1) shown below, and having a Cl concentration of 0.1 to 100 ppm, as measured by an elution method of the ferrite core material: (MnO)x(MgO)y(Fe2O3)z (1) wherein x=35 to 45 mol %, y=5 to 15 mol %, z=40 to 60 mol %, and x+y+z=100 mol %.
摘要翻译:提供一种用于电子照相显影剂的铁氧体芯材料,该铁氧体磁芯材料具有如下所示的式(1)所示的铁氧体颗粒组合物,其含有SrO,其代替式(1)中的(MnO)和/或(MgO)的一部分, 1),并且通过铁氧体磁心材料:(MnO)x(MgO)y(Fe 2 O 3)z(1)的洗脱方法测定的Cl浓度为0.1〜100ppm,其中x = 35〜45mol %,y = 5〜15摩尔%,z = 40〜60摩尔%,x + y + z = 100摩尔%。
摘要:
A carrier core material for an electrophotographic developer containing Li ferrite, maghemite, and Fe3O4, wherein a part thereof is substituted with Mn, a Li content is 1 to 2.5% by weight, a Mn content is 2 to 7.5% by weight, and a silicon content is 25 to 10,000 ppm, a compression breaking strength is 130 MPa or more, an SF-1 is 125 to 145, respective cumulative strengths of respective spinel crystal structure faces in X-ray diffraction satisfy a certain equation, a vacuum resistivity R500 across a 2 mm gap when a measurement voltage of 500 V is applied is 1×106 to 5×109Ω, and a vacuum resistivity R1000 across a 6.5 mm gap when a measurement voltage of 1,000 V is applied is 5×107 to 1×1010Ω.
摘要:
A carrier core material for an electrophotographic developer including Li ferrite, maghemite, and Fe3O4, wherein a part thereof is substituted with Mn, Li content is 1 to 2.5% by weight, Mn content is 2 to 7.5% by weight, and silicon content is 25 to 10,000 ppm, the following equation (1) is satisfied when respective integrated strengths of spinel crystal structure (110), (210), (211), and (311) faces in X-ray diffraction are respectively I110, I210, I211, and I311, a resistivity R50 of 50 V across a 6.5 mm gap is 5×107 to 7×108Ω, and a resistivity R1000 of V across a 6.5 mm gap is 1×107 to 8×108Ω. 2