公开(公告)号：US20090218044A1

公开(公告)日：2009-09-03

申请号：US12393724

申请日：2009-02-26

申请人： Tadahiro OHMI ,  Masaki HIRAYAMA ,  Tetsuya GOTO ,  Yasuyuki SHIRAI ,  Masafumi KITANO ,  Kohei WATANUKI ,  Takaaki MATSUOKA ,  Shigemi MURAKAWA

发明人： Tadahiro OHMI ,  Masaki HIRAYAMA ,  Tetsuya GOTO ,  Yasuyuki SHIRAI ,  Masafumi KITANO ,  Kohei WATANUKI ,  Takaaki MATSUOKA ,  Shigemi MURAKAWA

IPC分类号： H01L21/306 ,  C23C16/513 ,  B32B9/04 ,  B05D5/06

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiO2 composition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.

摘要翻译： 传统的微波等离子体处理装置即使使用氪（Kr）作为等离子体产生气体，也只能得到与稀有气体例如氩气（Ar）相同的特性水平的氧化膜或氮化物膜 ）用作等离子体发生气体。 因此，代替形成仅具有陶瓷构件的微波等离子体处理装置的介电窗口，可以通过热处理获得化学计量的SiO 2组成的平坦化膜涂覆在陶瓷构件的多个表面中的一个表面上， 处理空间，然后热处理，从而形成具有非常平坦和致密表面的平坦化绝缘膜。 在平坦化绝缘膜上形成耐腐蚀膜。