公开(公告)号：US5436195A

公开(公告)日：1995-07-25

申请号：US292203

申请日：1994-08-18

申请人： Tadashi Kimura ,  Yutaka Mihashi ,  Katuhiko Goto ,  Takushi Itagaki

发明人： Tadashi Kimura ,  Yutaka Mihashi ,  Katuhiko Goto ,  Takushi Itagaki

IPC分类号： H01L27/15 ,  H01S5/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/20 ,  H01L21/20

CPC分类号： H01S5/0265 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/2077 ,  Y10S117/902

摘要： In a method of fabricating an integrated semiconductor light modulator and laser device, a semiconductor layer having first and second regions of different crystal compositions is produced on each chip region of a semiconductor wafer by a selective crystal growth using, as a mask, a dielectric film having a prescribed pattern. Thereafter, a semiconductor laser and a light modulator that modulates laser light emitted from the semiconductor layer are produced in a first semiconductor region and a second semiconductor region, respectively, of each chip region. In this method, the shape of the dielectric mask pattern and the shape of the opening of the mask pattern on each chip region is symmetrical with the dielectric mask pattern and opening of an adjacent chip region along the optical waveguide direction of the semiconductor laser. The semiconductor layer is grown on the wafer so that the first and second semiconductor regions of different crystal compositions on each chip region are in contact with semiconductor regions having the same crystal composition of an adjacent chip region. As the result, at opposite edges of the chip region in the optical waveguide direction, the crystal compositions of the first and second semiconductor regions are the same.

摘要翻译： 在制造集成半导体光调制器和激光器件的方法中，通过选择性晶体生长，在半导体晶片的每个芯片区域上制造具有不同晶体组成的第一和第二区域的半导体层，使用作为掩模的电介质膜 具有规定的图案。 此后，分别在每个芯片区域的第一半导体区域和第二半导体区域中产生调制从半导体层发射的激光的半导体激光器和光调制器。 在该方法中，电介质掩模图案的形状和每个芯片区域上的掩模图案的开口的形状与电介质掩模图案对准，并且沿着半导体激光器的光波导方向打开相邻的芯片区域。 半导体层在晶片上生长，使得在每个芯片区域上具有不同晶体组成的第一和第二半导体区域与具有相邻芯片区域的相同晶体组成的半导体区域接触。 结果，在光波导方向的芯片区域的相对边缘处，第一和第二半导体区域的晶体组成相同。