公开(公告)号：US20060262636A1

公开(公告)日：2006-11-23

申请号：US11497126

申请日：2006-08-01

申请人： Tae Kim ,  Charles Ingalls ,  Howard Kirsch ,  Jeremy Gum

发明人： Tae Kim ,  Charles Ingalls ,  Howard Kirsch ,  Jeremy Gum

IPC分类号： G11C8/00

CPC分类号： G11C8/08

摘要： Memory devices configured to reduce coupling noise between adjacent wordlines in a memory array. More specifically, wordline drivers are interleaved such that adjacent wordlines are driven by wordline drivers enabled by different row decoders. Each wordline driver includes a weak transistor to ground and a strong transistor to ground. By disabling the wordline driver on the wordlines directly adjacent to the active wordlines, a path is provided to drive the coupling noise from the active wordline to ground through the strong transistor.

摘要翻译： 配置为减少存储器阵列中相邻字线之间的耦合噪声的存储器件。 更具体地说，字线驱动器被交错，使得相邻字线由不同行解码器启用的字线驱动器驱动。 每个字线驱动器包括一个微弱的晶体管接地和一个强大的晶体管接地。 通过禁用与​​有源字线直接相邻的字线上的字线驱动器，提供一个路径，以通过强晶体管驱动从有源字线到地的耦合噪声。

公开(公告)号：US20060044921A1

公开(公告)日：2006-03-02

申请号：US10928034

申请日：2004-08-27

申请人： Tae Kim ,  Charles Ingalls ,  Howard Kirsch ,  Jeremy Gum

发明人： Tae Kim ,  Charles Ingalls ,  Howard Kirsch ,  Jeremy Gum

IPC分类号： G11C8/00

CPC分类号： G11C8/08

摘要： Memory devices configured to reduce coupling noise between adjacent wordlines in a memory array. More specifically, wordline drivers are interleaved such that adjacent wordlines are driven by wordline drivers enabled by different row decoders. Each wordline driver includes a weak transistor to ground and a strong transistor to ground. By disabling the wordline driver on the wordlines directly adjacent to the active wordlines, a path is provided to drive the coupling noise from the active wordline to ground through the strong transistor.

公开(公告)号：US20060274596A1

公开(公告)日：2006-12-07

申请号：US11497176

申请日：2006-08-01

申请人： Tae Kim ,  Charles Ingalls ,  Howard Kirsch ,  Jeremy Gum

发明人： Tae Kim ,  Charles Ingalls ,  Howard Kirsch ,  Jeremy Gum

IPC分类号： G11C8/00

CPC分类号： G11C8/08

摘要： Memory devices configured to reduce coupling noise between adjacent wordlines in a memory array. More specifically, wordline drivers are interleaved such that adjacent wordlines are driven by wordline drivers enabled by different row decoders. Each wordline driver includes a weak transistor to ground and a strong transistor to ground. By disabling the wordline driver on the wordlines directly adjacent to the active wordlines, a path is provided to drive the coupling noise from the active wordline to ground through the strong transistor.