公开(公告)号：US10403791B2

公开(公告)日：2019-09-03

申请号：US15629051

申请日：2017-06-21

申请人： Tae Yeon Seong ,  Ki Seok Kim ,  Sung-joo Song

发明人： Tae Yeon Seong ,  Ki Seok Kim ,  Sung-joo Song

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/02 ,  H01L33/24 ,  H01L33/00 ,  H01L33/32 ,  H01L33/20 ,  H01L33/30 ,  H01L33/40 ,  H01L33/42 ,  H01L33/38

摘要： A vertical light-emitting diode device and a method of fabricating the same are provided. The device may include a conductive substrate serving as a p electrode, a p-type GaN layer provided on the conductive substrate, an active layer provided on the p-type GaN layer, an n-type GaN layer provided on the active layer, an n electrode pattern provided on the n-type GaN layer, a metal oxide structure filling a plurality of holes formed in the n-type GaN layer, and a seed layer provided on bottom surfaces of the holes and used to as a seed in a crystal growth process of the metal oxide structure.

公开(公告)号：US10333026B2

公开(公告)日：2019-06-25

申请号：US15629020

申请日：2017-06-21

申请人： Tae Yeon Seong ,  Ki Seok Kim ,  Sung-joo Song

发明人： Tae Yeon Seong ,  Ki Seok Kim ,  Sung-joo Song

IPC分类号： H01L33/10 ,  H01L33/00 ,  H01L33/32 ,  H01L33/20 ,  H01L33/38

摘要： Provided are a lateral light emitting diode device and a method for fabricating the same. The lateral light emitting diode device includes a substrate; an n-type GaN layer disposed on the substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer, a plurality of holes being formed in the p-type GaN layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a seed layer disposed on bottom surfaces of the plurality of holes; metal oxide structures grown on the seed layer in a crystalline state to fill the plurality of holes; and an n-electrode disposed on the n-type GaN layer exposed by removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer.