公开(公告)号：US20100270605A1

公开(公告)日：2010-10-28

申请号：US12604757

申请日：2009-10-23

申请人： Tae-Ho CHOI ,  Jung-Hwan Lee ,  Heung-Gee Hong ,  Jeong-Ho Cho ,  Min-Wan Choo ,  Il-Seok Han

发明人： Tae-Ho CHOI ,  Jung-Hwan Lee ,  Heung-Gee Hong ,  Jeong-Ho Cho ,  Min-Wan Choo ,  Il-Seok Han

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L21/28273 ,  H01L29/42324 ,  H01L29/512 ,  H01L29/66825 ,  H01L29/7881

摘要： A nonvolatile memory cell and a method for fabricating the same can secure stable operational reliability as well as reducing a cell size. The nonvolatile memory cell includes a drain region formed in a substrate, a source region formed in the substrate to be separated from the drain region, a floating gate formed over the substrate between the drain region and the source region, a halo region formed in the substrate in a direction that the drain region is formed, a dielectric layer formed on sidewalls of the floating gate, and a control gate formed over the dielectric layer to overlap with at least one sidewall of the floating gate.

摘要翻译： 非易失性存储单元及其制造方法可以确保稳定的操作可靠性以及减小单元尺寸。 非易失性存储单元包括形成在衬底中的漏极区，形成在衬底中的与漏极区分离的源极区，在漏极区和源极区之间形成在衬底上的浮置栅， 在形成漏极区域的方向上形成衬底，形成在浮置栅极的侧壁上的电介质层以及形成在电介质层上以与浮动栅极的至少一个侧壁重叠的控制栅极。