公开(公告)号：US08026990B2

公开(公告)日：2011-09-27

申请号：US12249833

申请日：2008-10-10

申请人： Tae-Hyung Hwang ,  Hyung-Il Jeon ,  Nikulin Ivan

发明人： Tae-Hyung Hwang ,  Hyung-Il Jeon ,  Nikulin Ivan

IPC分类号： G02F1/136 ,  G02F1/133

CPC分类号： G02F1/136259 ,  G02F1/133305 ,  G02F1/1368 ,  G02F2201/12 ,  G02F2202/103 ,  G09G3/3696 ,  G09G2300/043 ,  H01L29/78606 ,  H01L29/78669

摘要： A method of compensating performance of a thin film transistor including a gate electrode, source and drain electrodes that are spaced apart from each other and insulated from the gate electrode, and an active layer to form a channel between the source and drain electrodes, includes applying a negative voltage to the gate electrode to compensate deterioration of the active layer.

摘要翻译： 一种补偿薄膜晶体管的性能的方法，该薄膜晶体管包括彼此间隔开并与栅电极绝缘的栅电极，源电极和漏电极以及在源极和漏极之间形成沟道的有源层，包括施加 向栅电极施加负电压以补偿有源层的劣化。