公开(公告)号：US20120149144A1

公开(公告)日：2012-06-14

申请号：US13276044

申请日：2011-10-18

申请人： Myung-Su KIM ,  Min-Chul Song ,  Soon-Young Park ,  Dong-Seop Kim ,  Sung Chan Park ,  Yoon-Mook Kang ,  Tae-Jun Kim ,  Min-Ki Shin ,  Sang-Won Lee ,  Heung-Kyoon Lim

发明人： Myung-Su KIM ,  Min-Chul Song ,  Soon-Young Park ,  Dong-Seop Kim ,  Sung Chan Park ,  Yoon-Mook Kang ,  Tae-Jun Kim ,  Min-Ki Shin ,  Sang-Won Lee ,  Heung-Kyoon Lim

IPC分类号： H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.

摘要翻译： 提出了一种制造太阳能电池的方法。 该方法包括：在光吸收层的第一表面上形成非晶硅层; 用掺杂剂掺杂非晶硅层; 通过用激光将掺杂剂扩散到非晶硅层中形成掺杂剂层; 通过去除保留在掺杂剂层外部的掺杂剂形成半导体层; 通过使用蚀刻剂蚀刻半导体层的表面; 在所述半导体层上形成第一电极; 以及在所述光吸收层的第二表面上形成第二电极。

公开(公告)号：US20120295391A1

公开(公告)日：2012-11-22

申请号：US13309870

申请日：2011-12-02

申请人： Yoon-Mook KANG ,  Min-Chul Song ,  Tae-Jun Kim ,  Min-Sung Kim ,  Min-Ki Shin ,  Myung-Su Kim ,  Myeong-Woo Kim ,  Sang-Won Lee ,  Soon-Young Park ,  Heung-Kyoon Lim

发明人： Yoon-Mook KANG ,  Min-Chul Song ,  Tae-Jun Kim ,  Min-Sung Kim ,  Min-Ki Shin ,  Myung-Su Kim ,  Myeong-Woo Kim ,  Sang-Won Lee ,  Soon-Young Park ,  Heung-Kyoon Lim

IPC分类号： H01L31/18

CPC分类号： H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/547

摘要： A method of manufacturing a solar cell includes preparing a base substrate having a first conductive type; diffusing an impurity having a second conductive type (opposite the first conductive type) into the base substrate to form an emitter layer having a first impurity concentration on the base substrate and a by-product layer on the emitter layer; irradiating a laser beam onto the emitter layer corresponding to a first region of the base substrate to form a front contact portion having a second impurity concentration higher than the first impurity concentration; irradiating the laser beam onto the by-product layer to remove the by-product layer corresponding to the first region; removing the by-product layer from an area outside of the first region; forming an anti-reflection layer on the base substrate; forming a front electrode on the anti-reflection layer corresponding to the first region; and forming a back electrode on the base substrate.

摘要翻译： 一种制造太阳能电池的方法包括制备具有第一导电类型的基底基板; 将具有第二导电类型（与第一导电类型相反）的杂质扩散到基底衬底中，以在基底衬底上形成具有第一杂质浓度的发射极层和发射极层上的副产物层; 将激光束照射到与基底基板的第一区域对应的发射极层上，以形成具有高于第一杂质浓度的第二杂质浓度的前接触部分; 将激光束照射到副产物层上以去除对应于第一区域的副产物层; 从第一区域外的区域除去副产物层; 在基底基板上形成防反射层; 在对应于第一区域的防反射层上形成前电极; 以及在基底基板上形成背电极。

公开(公告)号：US20130125971A1

公开(公告)日：2013-05-23

申请号：US13587872

申请日：2012-08-16

申请人： Tae-Jun Kim ,  Min-Chul Song ,  Yoon-Mook Kang ,  Heung-Kyoon Lim

发明人： Tae-Jun Kim ,  Min-Chul Song ,  Yoon-Mook Kang ,  Heung-Kyoon Lim

IPC分类号： H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： Method of manufacturing a photovoltaic device and a photovoltaic device manufactured by using the method. The method includes forming a first conductive-type semiconductor layer using a first impurity on a semiconductor substrate, performing doping on a region of the first conductive-type semiconductor layer using a laser such that the region of the first conductive-type semiconductor layer has a higher concentration of the first impurity than a remaining portion of the first conductive-type semiconductor layer, performing edge isolation to form a groove portion at an edge portion of a rear surface of the semiconductor substrate, forming an antireflection layer on a front surface of the semiconductor substrate, forming a first metal electrode on the front surface of the semiconductor substrate, and forming a second metal electrode and a second conductive-type semiconductor layer including a second impurity that is different from the first impurity, on the rear surface of the semiconductor substrate.

摘要翻译： 使用该方法制造光伏器件和光伏器件的方法。 该方法包括在半导体衬底上形成使用第一杂质的第一导电型半导体层，使用激光在第一导电型半导体层的区域上进行掺杂，使得第一导电型半导体层的区域具有 第一杂质的浓度比第一导电型半导体层的剩余部分浓度高，进行边缘隔离以在半导体衬底的后表面的边缘部分形成沟槽部分，在半导体衬底的表面上形成抗反射层 半导体衬底，在半导体衬底的前表面上形成第一金属电极，并且在半导体衬底的后表面上形成第二金属电极和包括与第一杂质不同的第二杂质的第二导电型半导体层 基质。