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公开(公告)号:US20240355942A1
公开(公告)日:2024-10-24
申请号:US18685271
申请日:2022-09-23
Applicant: TRINA SOLAR CO., LTD.
Inventor: Hong CHEN , Jifan GAO , Yifeng CHEN
IPC: H01L31/0236 , C30B33/10 , H01L31/068 , H01L31/18
CPC classification number: H01L31/02363 , C30B33/10 , H01L31/02366 , H01L31/068 , H01L31/1892
Abstract: The present disclosure provides a texture structure of a solar cell and a preparation method therefor. The texture structure includes a texture with a surface including a contact region and a non-contact region. The contact region is provided with a metal gate line, and has a specific surface area smaller than the non-contact region. According to the texture structure of a solar cell and the preparation method therefor provided by the present disclosure, the texture of a metal gate line coverage region and the texture of a metal gate line non-coverage region form different microscopic appearances of texture structure, and the texture structure in the non-coverage region has a specific surface area much larger than the texture structure in the coverage region, thereby reducing a contact area between a slurry metal and a PN junction on the texture, reducing the metal recombination by more than 20%, and improving the conversion efficiency.
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公开(公告)号:US11901475B2
公开(公告)日:2024-02-13
申请号:US15538893
申请日:2015-11-25
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor: Hiroyuki Otsuka , Shozo Shirai
IPC: H01L31/18 , H01L21/22 , H01L21/324 , H01L31/068 , C30B31/18 , C30B29/06 , C30B31/08 , C30B33/02 , H01L31/0288
CPC classification number: H01L31/1804 , C30B29/06 , C30B31/08 , C30B31/185 , C30B33/02 , H01L21/22 , H01L21/324 , H01L31/0288 , H01L31/068 , H01L31/1864 , Y02E10/547 , Y02P70/50
Abstract: The present invention is a method for manufacturing a substrate for a solar cell composed of a single crystal silicon, including the steps of: producing a silicon single crystal ingot; slicing a silicon substrate from the silicon single crystal ingot; and subjecting the silicon substrate to low temperature thermal treatment at a temperature of 800° C. or more and less than 1200° C., wherein the silicon single crystal ingot or the silicon substrate is subjected to high temperature thermal treatment at a temperature of 1200° C. or more for 30 seconds or more before the low temperature thermal treatment. As a result, it is possible to provide a method for manufacturing a substrate for a solar cell that can prevent decrease in the minority carrier lifetime of the substrate even when the substrate has higher oxygen concentration.
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公开(公告)号:US20240006550A1
公开(公告)日:2024-01-04
申请号:US18367235
申请日:2023-09-12
Applicant: SHANGHAI JINKO GREEN ENERGY ENTERPRISE MANAGEMENT CO., LTD. , ZHEJIANG JINKO SOLAR CO., LTD.
Inventor: Kun YU , Changming LIU , Xinyu ZHANG
IPC: H01L31/18 , H01L31/0236 , H01L31/0368 , H01L31/068
CPC classification number: H01L31/1868 , H01L31/1824 , H01L31/068 , H01L31/03685 , H01L31/02366
Abstract: Provided are a solar cell, including: a semiconductor substrate, in which a rear surface of the semiconductor substrate having non-pyramid-shaped microstructures, the non-pyramid-shaped microstructures include two or more first substructures at least partially stacked on one another, and a one-dimensional size of the surface of the outermost first substructure is less than or equal to 45 μm; a first passivation layer located on a front surface of the semiconductor substrate; first and second tunnel oxide layers located on the non-pyramid-shaped microstructures; first and second doped conductive layers located on a surface of the first and second tunnel oxide layers, the first and second doped conductive layer has different conductive types; a second passivation layer located on a surface of the first and second doped conductive layers; and electrodes formed by penetrating through the second passivation layer to be in contact with the first and second doped conductive layers.
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公开(公告)号:US20230420581A1
公开(公告)日:2023-12-28
申请号:US18219450
申请日:2023-07-07
Applicant: SHIN-ETSU CHEMICAL CO., LTD.
Inventor: Takenori WATABE , Hiroshi HASHIGAMI , Hiroyuki OHTSUKA
IPC: H01L31/0224 , H01L31/0216 , H01L31/068 , H01L31/0236
CPC classification number: H01L31/022425 , H01L31/02167 , H01L31/068 , Y02P70/50 , H01L31/0682 , H01L31/02363 , Y02E10/50 , H01L31/022441
Abstract: A method for manufacturing a solar cell, including the steps of: forming unevenness on both of main surfaces of a semiconductor substrate of a first conductivity type; forming an emitter layer on a first main surface of the semiconductor substrate; forming a diffusion mask on the emitter layer; removing the diffusion mask in a pattern; forming a base layer on the portion where the diffusion mask have been removed; removing the remaining diffusion mask; forming a dielectric film on the first main surface; forming a base electrode on the base layer; and forming an emitter electrode on the emitter layer. This provides a method for manufacturing a solar cell that can bring high photoelectric conversion efficiency while decreasing the number of steps.
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公开(公告)号:US20230420580A1
公开(公告)日:2023-12-28
申请号:US18163871
申请日:2023-02-02
Applicant: ZHEJIANG JINKO SOLAR CO., LTD. , JINKO SOLAR CO., LTD.
Inventor: Bike ZHANG , Jingsheng JIN , Xinyu ZHANG , Jingyu CAO , Haiyan CHENG
IPC: H01L31/02 , H01L31/048 , H01L31/0224 , H01L31/028 , H01L31/0368 , H01L31/0376 , H01L31/05 , H01L31/068
CPC classification number: H01L31/0201 , H01L31/048 , H01L31/022433 , H01L31/028 , H01L31/03685 , H01L31/03762 , H01L31/0504 , H01L31/068
Abstract: Embodiments of the present disclosure provide a solar cell and a photovoltaic module. The solar cell includes a substrate, a tunneling dielectric layer formed on the substrate, a doped conductive layer formed on the tunneling dielectric layer, at least one conductive connection structure, a passivation layer over the doped conductive layer and the at least one conductive connection structure, and a plurality of finger electrodes. The doped conductive layer has a plurality of protrusions arranged along a first direction, each protrusion extends along a second direction perpendicular to the first direction. The at least one conductive connection structure is formed between two adjacent protrusions and connected with sidewalls of the two adjacent protrusions. Each finger electrode of the plurality of finger electrodes extends along the second direction to penetrate the passivation layer and connect to a respective protrusion.
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公开(公告)号:US20230411551A1
公开(公告)日:2023-12-21
申请号:US17880646
申请日:2022-08-03
Applicant: ZHEJIANG JINKO SOLAR CO., LTD.
Inventor: Jingsheng JIN , Bike ZHANG , Xinyu ZHANG
IPC: H01L31/18 , H01L31/048 , H01L31/068
CPC classification number: H01L31/182 , H01L31/048 , H01L31/068 , H01L31/1868 , H01L31/02363
Abstract: The present application relates to the technical field of solar cells, and in particular, to a method for preparing a solar cell, the solar cell, and a photovoltaic module. The method for preparing the solar cell includes: providing a substrate; forming a doped amorphous silicon layer on the first side of the substrate; performing laser treatment N times on the doped amorphous silicon layer to form N doped polysilicon layers ranging from a first doped polysilicon layer to a Nth doped polysilicon layer stacked in a direction away from the substrate, where N>1, a power, a wavelength and a pulse irradiation number of a nth laser treatment are respectively smaller than a power, a wavelength and a pulse irradiation number of a (n-1)th laser treatment, where n≤N, and the first doped polysilicon layer is disposed closer to the substrate than the Nth doped polysilicon layer. The embodiments of the present application are conducive to simplify the process of forming the solar cell.
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7.
公开(公告)号:US20230275175A1
公开(公告)日:2023-08-31
申请号:US18143940
申请日:2023-05-05
Applicant: Maxeon Solar Pte. Ltd.
Inventor: David D. Smith
IPC: H01L31/068 , H01L31/18 , H01L31/028 , H01L31/0236
CPC classification number: H01L31/068 , H01L31/182 , H01L31/028 , H01L31/02366
Abstract: A solar cell, and methods of fabricating said solar cell, are disclosed. The solar cell can include a substrate having a light-receiving surface and a back surface. The solar cell can include a first semiconductor region of a first conductivity type disposed on a first dielectric layer, wherein the first dielectric layer is disposed on the substrate. The solar cell can also include a second semiconductor region of a second, different, conductivity type disposed on a second dielectric layer, where a portion of the second thin dielectric layer is disposed between the first and second semiconductor regions. The solar cell can include a third dielectric layer disposed on the second semiconductor region. The solar cell can include a first conductive contact disposed over the first semiconductor region but not the third dielectric layer. The solar cell can include a second conductive contact disposed over the second semiconductor region, where the second conductive contact is disposed over the third dielectric layer and second semiconductor region. In an embodiment, the third dielectric layer can be a dopant layer.
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公开(公告)号:US20230178665A1
公开(公告)日:2023-06-08
申请号:US18163134
申请日:2023-02-01
Applicant: KANEKA CORPORATION
Inventor: Shimpei OKAMOTO , Junichi Nakamura
IPC: H01L31/0224 , H01L31/068 , H01L31/18
CPC classification number: H01L31/022433 , H01L31/068 , H01L31/1804
Abstract: A solar cell capable of preventing short-circuiting during signaling connection and a method for manufacturing the solar cell. A solar cell includes a semiconductor substrate, a first semiconductor layer having a conductivity type different from that of the semiconductor substrate. The first semiconductor layer includes a main functional portion which has a first base end portion on one side in a first direction of the semiconductor substrate over an entire length in a second direction and a plurality of first collecting portions extending from the first base end portion toward the other side in the first direction and on which a first electrode pattern is stacked, and an isolation portion which is formed linearly at an end portion on the other side in the first direction of the semiconductor substrate over an entire length in the second direction and on which the first electrode pattern is not stacked.
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公开(公告)号:US11664468B2
公开(公告)日:2023-05-30
申请号:US15407812
申请日:2017-01-17
Inventor: Sunghyun Hwang , Jinsung Kim , Hyunho Lee , Haejong Cho , Donghae Oh
IPC: H01L31/00 , H01L31/0224 , H01L31/05 , H01L31/068 , H01L31/0216 , H01L31/0352
CPC classification number: H01L31/022433 , H01L31/02167 , H01L31/022425 , H01L31/03529 , H01L31/0504 , H01L31/0508 , H01L31/068 , H01L31/0684 , Y02E10/50 , Y02E10/547
Abstract: A solar cell includes a substrate having a front surface and a back surface; an emitter formed on the front surface of the substrate; a plurality of first electrodes positioned on the emitter and extended in first direction; a plurality of first bus lines positioned on the emitter and extended in second direction crossing to the first direction; a plurality of back surface field regions formed on the back surface of the substrate and extended in the first direction; a plurality of second electrodes positioned on the plurality of back surface field regions and extended in the first direction; and, a plurality of second bus lines extended in the second direction.
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公开(公告)号:US20190252572A1
公开(公告)日:2019-08-15
申请号:US16307562
申请日:2017-06-06
Applicant: NewSouth Innovations Pty Limited
Inventor: Stuart Ross Wenham , Alison Ciesla , Brett Jason Hallam , Catherine Emily Chan , Chee Mun Chong , Ran Chen , Malcolm David Abbott , David Neil Payne
IPC: H01L31/18 , H01L31/068 , H01L31/0224
CPC classification number: H01L31/1864 , H01L31/022425 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
Abstract: The present disclosure provides methods for manufacturing a photovoltaic device that comprise a sequence of annealing steps and exposure to electromagnetic radiation during annealing that allow passivating electrically active defects and stabilising the performance of photovoltaic device.
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