TEXTURE STRUCTURE OF SOLAR CELL AND PREPARATION METHOD THEREFOR

    公开(公告)号:US20240355942A1

    公开(公告)日:2024-10-24

    申请号:US18685271

    申请日:2022-09-23

    Abstract: The present disclosure provides a texture structure of a solar cell and a preparation method therefor. The texture structure includes a texture with a surface including a contact region and a non-contact region. The contact region is provided with a metal gate line, and has a specific surface area smaller than the non-contact region. According to the texture structure of a solar cell and the preparation method therefor provided by the present disclosure, the texture of a metal gate line coverage region and the texture of a metal gate line non-coverage region form different microscopic appearances of texture structure, and the texture structure in the non-coverage region has a specific surface area much larger than the texture structure in the coverage region, thereby reducing a contact area between a slurry metal and a PN junction on the texture, reducing the metal recombination by more than 20%, and improving the conversion efficiency.

    METHOD FOR PREPARING SOLAR CELL AND SOLAR CELL, PHOTOVOLTAIC MODULE

    公开(公告)号:US20230411551A1

    公开(公告)日:2023-12-21

    申请号:US17880646

    申请日:2022-08-03

    Abstract: The present application relates to the technical field of solar cells, and in particular, to a method for preparing a solar cell, the solar cell, and a photovoltaic module. The method for preparing the solar cell includes: providing a substrate; forming a doped amorphous silicon layer on the first side of the substrate; performing laser treatment N times on the doped amorphous silicon layer to form N doped polysilicon layers ranging from a first doped polysilicon layer to a Nth doped polysilicon layer stacked in a direction away from the substrate, where N>1, a power, a wavelength and a pulse irradiation number of a nth laser treatment are respectively smaller than a power, a wavelength and a pulse irradiation number of a (n-1)th laser treatment, where n≤N, and the first doped polysilicon layer is disposed closer to the substrate than the Nth doped polysilicon layer. The embodiments of the present application are conducive to simplify the process of forming the solar cell.

    SOLAR CELLS HAVING HYBRID ARCHITECTURES INCLUDING DIFFERENTIATED P-TYPE AND N-TYPE REGIONS

    公开(公告)号:US20230275175A1

    公开(公告)日:2023-08-31

    申请号:US18143940

    申请日:2023-05-05

    Inventor: David D. Smith

    CPC classification number: H01L31/068 H01L31/182 H01L31/028 H01L31/02366

    Abstract: A solar cell, and methods of fabricating said solar cell, are disclosed. The solar cell can include a substrate having a light-receiving surface and a back surface. The solar cell can include a first semiconductor region of a first conductivity type disposed on a first dielectric layer, wherein the first dielectric layer is disposed on the substrate. The solar cell can also include a second semiconductor region of a second, different, conductivity type disposed on a second dielectric layer, where a portion of the second thin dielectric layer is disposed between the first and second semiconductor regions. The solar cell can include a third dielectric layer disposed on the second semiconductor region. The solar cell can include a first conductive contact disposed over the first semiconductor region but not the third dielectric layer. The solar cell can include a second conductive contact disposed over the second semiconductor region, where the second conductive contact is disposed over the third dielectric layer and second semiconductor region. In an embodiment, the third dielectric layer can be a dopant layer.

    SOLAR CELL AND MANUFACTURING METHOD
    8.
    发明公开

    公开(公告)号:US20230178665A1

    公开(公告)日:2023-06-08

    申请号:US18163134

    申请日:2023-02-01

    CPC classification number: H01L31/022433 H01L31/068 H01L31/1804

    Abstract: A solar cell capable of preventing short-circuiting during signaling connection and a method for manufacturing the solar cell. A solar cell includes a semiconductor substrate, a first semiconductor layer having a conductivity type different from that of the semiconductor substrate. The first semiconductor layer includes a main functional portion which has a first base end portion on one side in a first direction of the semiconductor substrate over an entire length in a second direction and a plurality of first collecting portions extending from the first base end portion toward the other side in the first direction and on which a first electrode pattern is stacked, and an isolation portion which is formed linearly at an end portion on the other side in the first direction of the semiconductor substrate over an entire length in the second direction and on which the first electrode pattern is not stacked.

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