公开(公告)号：US08049306B2

公开(公告)日：2011-11-01

申请号：US12795564

申请日：2010-06-07

申请人： Taeg-hyun Kang ,  Sung-son Yun

发明人： Taeg-hyun Kang ,  Sung-son Yun

IPC分类号： H01L29/00

CPC分类号： H01L27/0727 ,  H01L27/0761 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/7819 ,  H01L29/861

摘要： A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the high voltage transistor—isolated from the control block by a device isolation region. The high voltage transistor includes a semiconductor substrate of a first conductivity type, a epitaxial layer of a second conductivity type on the semiconductor substrate, a buried layer of the second conductivity type between the semiconductor substrate and the epitaxial layer, a collector region of the second conductivity type on the buried layer, a base region of the first conductivity type on the epitaxial layer, and an emitter region of the second conductivity type formed in the base region. The power block further includes a deep impurity region of the first conductivity type near the collector region to form a PN junction.

摘要翻译： 高压集成电路包含嵌入晶体管的续流二极管。 它还包括控制高压晶体管的控制块和包括通过器件隔离区从控制块隔离的高压晶体管的功率块。 高压晶体管包括第一导电类型的半导体衬底，半导体衬底上的第二导电类型的外延层，半导体衬底和外延层之间的第二导电类型的掩埋层，第二导电类型的第二导电类型的集电极区域 掩埋层上的导电类型，外延层上的第一导电类型的基极区域和形成在基极区域中的第二导电类型的发射极区域。 功率块还包括在集电极区附近的第一导电类型的深杂质区，以形成PN结。

公开(公告)号：US20100244756A1

公开(公告)日：2010-09-30

申请号：US12795564

申请日：2010-06-07

申请人： Taeg-hyun Kang ,  Sung-son Yun

发明人： Taeg-hyun Kang ,  Sung-son Yun

IPC分类号： H02P6/14 ,  H01L27/06

CPC分类号： H01L27/0727 ,  H01L27/0761 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/7819 ,  H01L29/861

摘要： A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the high voltage transistor—isolated from the control block by a device isolation region. The high voltage transistor includes a semiconductor substrate of a first conductivity type, a epitaxial layer of a second conductivity type on the semiconductor substrate, a buried layer of the second conductivity type between the semiconductor substrate and the epitaxial layer, a collector region of the second conductivity type on the buried layer, a base region of the first conductivity type on the epitaxial layer, and an emitter region of the second conductivity type formed in the base region. The power block further includes a deep impurity region of the first conductivity type near the collector region to form a PN junction.

摘要翻译： 高压集成电路包含嵌入晶体管的续流二极管。 它还包括控制高压晶体管的控制块和包括通过器件隔离区从控制块隔离的高压晶体管的功率块。 高压晶体管包括第一导电类型的半导体衬底，半导体衬底上的第二导电类型的外延层，半导体衬底和外延层之间的第二导电类型的掩埋层，第二导电类型的第二导电类型的集电极区域 掩埋层上的导电类型，外延层上的第一导电类型的基极区域和形成在基极区域中的第二导电类型的发射极区域。 功率块还包括在集电极区附近的第一导电类型的深杂质区，以形成PN结。

公开(公告)号：US07732858B2

公开(公告)日：2010-06-08

申请号：US11603671

申请日：2006-11-22

申请人： Taeg-hyun Kang ,  Sung-son Yun

发明人： Taeg-hyun Kang ,  Sung-son Yun

IPC分类号： H01L29/94

CPC分类号： H01L27/0727 ,  H01L27/0761 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/7819 ,  H01L29/861

摘要： A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the high voltage transistor—isolated from the control block by a device isolation region. The high voltage transistor includes a semiconductor substrate of a first conductivity type, a epitaxial layer of a second conductivity type on the semiconductor substrate, a buried layer of the second conductivity type between the semiconductor substrate and the epitaxial layer, a collector region of the second conductivity type on the buried layer, a base region of the first conductivity type on the epitaxial layer, and an emitter region of the second conductivity type formed in the base region. The power block further includes a deep impurity region of the first conductivity type near the collector region to form a PN junction.

摘要翻译： 高压集成电路包含嵌入晶体管的续流二极管。 它还包括控制高压晶体管的控制块和包括通过器件隔离区从控制块隔离的高压晶体管的功率块。 高压晶体管包括第一导电类型的半导体衬底，半导体衬底上的第二导电类型的外延层，半导体衬底和外延层之间的第二导电类型的掩埋层，第二导电类型的第二导电类型的集电极区域 掩埋层上的导电类型，外延层上的第一导电类型的基极区域和形成在基极区域中的第二导电类型的发射极区域。 功率块还包括在集电极区附近的第一导电类型的深杂质区，以形成PN结。

公开(公告)号：US20070132008A1

公开(公告)日：2007-06-14

申请号：US11603671

申请日：2006-11-22

申请人： Taeg-hyun Kang ,  Sung-son Yun

发明人： Taeg-hyun Kang ,  Sung-son Yun

IPC分类号： H01L29/788

CPC分类号： H01L27/0727 ,  H01L27/0761 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/7819 ,  H01L29/861

摘要： A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the high voltage transistor—isolated from the control block by a device isolation region. The high voltage transistor includes a semiconductor substrate of a first conductivity type, a epitaxial layer of a second conductivity type on the semiconductor substrate, a buried layer of the second conductivity type between the semiconductor substrate and the epitaxial layer, a collector region of the second conductivity type on the buried layer, a base region of the first conductivity type on the epitaxial layer, and an emitter region of the second conductivity type formed in the base region. The power block further includes a deep impurity region of the first conductivity type near the collector region to form a PN junction.

摘要翻译： 高压集成电路包含嵌入晶体管的续流二极管。 它还包括控制高压晶体管的控制块和包括通过器件隔离区从控制块隔离的高压晶体管的功率块。 高压晶体管包括第一导电类型的半导体衬底，半导体衬底上的第二导电类型的外延层，半导体衬底和外延层之间的第二导电类型的掩埋层，第二导电类型的第二导电类型的集电极区域 掩埋层上的导电类型，外延层上的第一导电类型的基极区域和形成在基极区域中的第二导电类型的发射极区域。 功率块还包括在集电极区附近的第一导电类型的深杂质区，以形成PN结。