公开(公告)号：US08912028B2

公开(公告)日：2014-12-16

申请号：US13330315

申请日：2011-12-19

申请人： Taeil Jung ,  YoungChae Kim ,  SunMan Kim ,  Yeji Han ,  Chunghoon Park ,  Byeong-Kyun Choi ,  Se-Eun Kang

发明人： Taeil Jung ,  YoungChae Kim ,  SunMan Kim ,  Yeji Han ,  Chunghoon Park ,  Byeong-Kyun Choi ,  Se-Eun Kang

IPC分类号： H01L33/42 ,  H01L33/20

CPC分类号： H01L33/42 ,  H01L33/20

摘要： A semiconductor light emitting device, which includes a light transmissive electrode layer formed using a conductive thin film and an insulating thin film to substitute for a transparent electrode layer, comprises a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; a light transmissive electrode layer formed on the second semiconductor layer, the light transmissive electrode layer having a structure in which at least one conductive thin film and at least one insulating thin film are deposited; and a first electrode formed on the light transmissive electrode layer, wherein the light transmissve electrode layer includes at least one contact portion for contacting the at least one conductive thin film with the first electrode.

摘要翻译： 包括使用导电薄膜形成的透光电极层和用于代替透明电极层的绝缘薄膜的半导体发光器件包括衬底; 形成在所述基板上的第一半导体层; 形成在所述第一半导体层上的有源层; 形成在所述有源层上的第二半导体层; 形成在所述第二半导体层上的透光电极层，所述透光电极层具有其中沉积至少一个导电薄膜和至少一个绝缘薄膜的结构; 以及形成在所述透光电极层上的第一电极，其中所述透光电极层包括用于使所述至少一个导电薄膜与所述第一电极接触的至少一个接触部分。