公开(公告)号：US20190096951A1

公开(公告)日：2019-03-28

申请号：US15882382

申请日：2018-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., LTD.

Inventor： YUN-WEI CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Shih-Hsun HSU

IPC: H01L27/146

Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.