公开(公告)号：US20200286939A1

公开(公告)日：2020-09-10

申请号：US16881854

申请日：2020-05-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Hsun HSU

IPC: H01L27/146

Abstract: An image sensor device is provided. The image sensor device includes a substrate. The image sensor device includes a light-sensing region in the substrate. The image sensor device includes an isolation structure in the substrate. The isolation structure surrounds the light-sensing region. The image sensor device includes a grid layer over the substrate. The grid layer is over the isolation structure. The image sensor device includes a first lens over the light-sensing region and surrounded by the grid layer. The image sensor device includes a color filter layer over and in direct contact with the first lens. The image sensor device includes a second lens over the color filter layer.

公开(公告)号：US20220231075A1

公开(公告)日：2022-07-21

申请号：US17717489

申请日：2022-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Shih-Hsun HSU

IPC: H01L27/146

Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.

公开(公告)号：US20190148434A1

公开(公告)日：2019-05-16

申请号：US16049048

申请日：2018-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Hsun HSU

IPC: H01L27/146

Abstract: A method for forming an image sensor device is provided. The method includes forming an isolation structure in a substrate. The method includes forming a light-sensing region in the substrate. The isolation structure surrounds the light-sensing region. The method includes forming a grid layer over the substrate. The grid layer is over the isolation structure and has an opening over the light-sensing region. The method includes forming a first lens in or over the opening. The method includes forming a second lens over the first lens and the grid layer.

公开(公告)号：US20190096951A1

公开(公告)日：2019-03-28

申请号：US15882382

申请日：2018-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., LTD.

Inventor： YUN-WEI CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Shih-Hsun HSU

IPC: H01L27/146

Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.

公开(公告)号：US20140106544A1

公开(公告)日：2014-04-17

申请号：US14132192

申请日：2013-12-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsien-Wei CHEN ,  Shih-Hsun HSU

IPC: H01L21/78

CPC classification number: H01L21/78 ,  B28D5/022 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor wafer with an assisting dicing structure. The wafer comprises a substrate having a front surface and a rear surface. The front surface of the substrate comprises at least two device regions separated by at least one dicing lane. The rear surface of the substrate comprises at least one pre-dicing trench formed therein and substantially aligned with the dicing lane. A method for dicing a semiconductor wafer is also disclosed.

Abstract translation: 具有辅助切割结构的半导体晶片。 晶片包括具有前表面和后表面的基板。 衬底的前表面包括由至少一个切割通道分开的至少两个器件区域。 衬底的后表面包括形成在其中并与切割通道基本对齐的至少一个预切割沟槽。 还公开了一种用于切割半导体晶片的方法。