公开(公告)号：US10304772B2

公开(公告)日：2019-05-28

申请号：US15599687

申请日：2017-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Te Chen ,  Chung-Hui Chen ,  Wei-Chih Chen ,  Chii-Ping Chen ,  Wen-Sheh Huang ,  Bi-Ling Lin ,  Sheng-Feng Liu

IPC: H01L23/522 ,  H01L27/06 ,  H01L23/367 ,  H01L29/423

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate, a gate stack, and an interconnect structure over the gate stack and the semiconductor substrate. The semiconductor device structure also includes a resistive element over the interconnect structure, and the resistive element is directly above the gate stack. The semiconductor device structure further includes a thermal conductive element over the interconnect structure. A direct projection of the thermal conductive element on a main surface of the resistive element extends across a portion of a first imaginary line and a portion of a second imaginary line of the main surface. The first imaginary line is perpendicular to the second imaginary line. The first imaginary line and the second imaginary line intersect at a center of the main surface. The semiconductor device structure includes a dielectric layer separating the thermal conductive element from the resistive element.