公开(公告)号：US20240387372A1

公开(公告)日：2024-11-21

申请号：US18786524

申请日：2024-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Chih Huang ,  Li-An Sun ,  Che-En Tsai ,  Yu-Lin Chiang ,  Chung Chuan Huang ,  Chih-Hao Chen

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/535

Abstract: A method includes forming a first etch stop layer (ESL) over a conductive feature, forming a first dielectric layer on the first ESL, forming a second ESL on the first dielectric layer, forming a second dielectric layer on the second ESL, forming a trench in the second dielectric layer, forming a first opening in a bottom surface of the trench extending through the second dielectric layer, and forming a second opening in a bottom surface of the first opening. The second opening extends through the first dielectric layer and the first ESL. The second opening exposes a top surface of the conductive feature. The method further includes widening the first opening to a second width, filling the trench with a conductive material to form a conductive line, and filling the second opening and the first opening with the conductive material to form a conductive via.

公开(公告)号：US20230253321A1

公开(公告)日：2023-08-10

申请号：US18302182

申请日：2023-04-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Chih Huang ,  Li-An Sun ,  Che-En Tsai ,  Yu-Lin Chiang ,  Chung Chuan Huang ,  Chih-Hao Chen

IPC: H01L23/528 ,  H01L23/535 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L23/535 ,  H01L21/76895 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76805

Abstract: A method includes forming a first etch stop layer (ESL) over a conductive feature, forming a first dielectric layer on the first ESL, forming a second ESL on the first dielectric layer, forming a second dielectric layer on the second ESL, forming a trench in the second dielectric layer, forming a first opening in a bottom surface of the trench extending through the second dielectric layer, and forming a second opening in a bottom surface of the first opening. The second opening extends through the first dielectric layer and the first ESL. The second opening exposes a top surface of the conductive feature. The method further includes widening the first opening to a second width, filling the trench with a conductive material to form a conductive line, and filling the second opening and the first opening with the conductive material to form a conductive via.

公开(公告)号：US11652049B2

公开(公告)日：2023-05-16

申请号：US17318327

申请日：2021-05-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Chih Huang ,  Li-An Sun ,  Che-En Tsai ,  Yu-Lin Chiang ,  Chung Chuan Huang ,  Chih-Hao Chen

IPC: H01L23/528 ,  H01L23/535 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76895 ,  H01L23/535

Abstract: A method includes forming a first etch stop layer (ESL) over a conductive feature, forming a first dielectric layer on the first ESL, forming a second ESL on the first dielectric layer, forming a second dielectric layer on the second ESL, forming a trench in the second dielectric layer, forming a first opening in a bottom surface of the trench extending through the second dielectric layer, and forming a second opening in a bottom surface of the first opening. The second opening extends through the first dielectric layer and the first ESL. The second opening exposes a top surface of the conductive feature. The method further includes widening the first opening to a second width, filling the trench with a conductive material to form a conductive line, and filling the second opening and the first opening with the conductive material to form a conductive via.

公开(公告)号：US20220293520A1

公开(公告)日：2022-09-15

申请号：US17318327

申请日：2021-05-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Chin Huang ,  Li-An Sun ,  Che-En Tsai ,  Yu-Lin Chiang ,  Chung Chuan Huang ,  Chih-Hao Chen

IPC: H01L23/528 ,  H01L23/535 ,  H01L21/768

Abstract: A method includes forming a first etch stop layer (ESL) over a conductive feature, forming a first dielectric layer on the first ESL, forming a second ESL on the first dielectric layer, forming a second dielectric layer on the second ESL, forming a trench in the second dielectric layer, forming a first opening in a bottom surface of the trench extending through the second dielectric layer, and forming a second opening in a bottom surface of the first opening. The second opening extends through the first dielectric layer and the first ESL. The second opening exposes a top surface of the conductive feature. The method further includes widening the first opening to a second width, filling the trench with a conductive material to form a conductive line, and filling the second opening and the first opening with the conductive material to form a conductive via.