公开(公告)号：US20250060660A1

公开(公告)日：2025-02-20

申请号：US18403574

申请日：2024-01-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yeh LEE ,  Ching-Fang YU ,  Hsueh-Wei HUANG ,  Yen-Cheng HO ,  Wei-Cheng LIN ,  Hsin-Yi YIN

IPC: G03F1/42

Abstract: A method includes: generating a designed mask overlay mark associated with an actual mask overlay mark to be formed in a mask; forming the actual mask overlay mark in the mask based on the designed mask overlay mark, the actual mask overlay mark including a plurality of overlay patterns; forming a device feature pattern adjacent to the actual mask overlay mark; forming an alignment of the mask by a mask metrology apparatus including a light source having a wavelength and a numerical aperture, wherein a pitch between adjacent two of the plurality of overlay patterns does not exceed the wavelength divided by twice the numerical aperture; and forming a pattern in a layer of a wafer by transferring the device feature pattern while the mask is under the alignment.