公开(公告)号：US20210055646A1

公开(公告)日：2021-02-25

申请号：US17080652

申请日：2020-10-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Cheng CHEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE ,  Shih-Ming CHANG ,  Tran-Hui SHEN ,  Yen-Cheng HO ,  Chen-Shao HSU

IPC: G03F1/36 ,  G03F1/76 ,  G03F1/78

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

公开(公告)号：US20250060660A1

公开(公告)日：2025-02-20

申请号：US18403574

申请日：2024-01-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yeh LEE ,  Ching-Fang YU ,  Hsueh-Wei HUANG ,  Yen-Cheng HO ,  Wei-Cheng LIN ,  Hsin-Yi YIN

IPC: G03F1/42

Abstract: A method includes: generating a designed mask overlay mark associated with an actual mask overlay mark to be formed in a mask; forming the actual mask overlay mark in the mask based on the designed mask overlay mark, the actual mask overlay mark including a plurality of overlay patterns; forming a device feature pattern adjacent to the actual mask overlay mark; forming an alignment of the mask by a mask metrology apparatus including a light source having a wavelength and a numerical aperture, wherein a pitch between adjacent two of the plurality of overlay patterns does not exceed the wavelength divided by twice the numerical aperture; and forming a pattern in a layer of a wafer by transferring the device feature pattern while the mask is under the alignment.

公开(公告)号：US20190155140A1

公开(公告)日：2019-05-23

申请号：US15967159

申请日：2018-04-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Chang LEE ,  Ping-Hsun LIN ,  Yen-Cheng HO ,  Chih-Cheng LIN ,  Chia-Jen CHEN

IPC: G03F1/24 ,  G03F1/52 ,  G03F1/54 ,  G03F1/68

Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.

公开(公告)号：US20190148110A1

公开(公告)日：2019-05-16

申请号：US15966862

申请日：2018-04-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Cheng CHEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE ,  Shih-Ming CHANG ,  Tran-Hui SHEN ,  Yen-Cheng HO ,  Chen-Shao HSU

IPC: H01J37/317 ,  G03F1/76 ,  G03F7/20

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.