公开(公告)号：US11088079B2

公开(公告)日：2021-08-10

申请号：US16454410

申请日：2019-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Kai Cheng ,  Tsung-Shu Lin ,  Tsung-Yu Chen ,  Hsien-Pin Hu ,  Wen-Hsin Wei

IPC: H01L23/538 ,  H01L23/49 ,  H01L25/10 ,  H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065

Abstract: A package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.