公开(公告)号：US20220344508A1

公开(公告)日：2022-10-27

申请号：US17582563

申请日：2022-01-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Sheng Huang ,  Chih-Chiang Chang ,  Ming-Hua Yu ,  Yee-Chia Yeo

IPC: H01L29/78 ,  H01L29/45 ,  H01L29/66 ,  H01L29/40

Abstract: A method includes forming a first semiconductor fin on a substrate, forming a source/drain region in the first semiconductor fin, depositing a capping layer on the source/drain region, where the capping layer includes a first boron concentration higher than a second boron concentration of the source/drain region, etching an opening through the capping layer, the opening exposing the source/drain region, forming a silicide layer on the exposed source/drain region and forming a source/drain contact on the silicide layer.