公开(公告)号：US20250149302A1

公开(公告)日：2025-05-08

申请号：US18502485

申请日：2023-11-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Kai Hu ,  Ren-Guan Duan ,  Chiun-Da Shiue ,  Chin-Han Meng

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/455 ,  C23C28/04

Abstract: An anti-plasma coating formed on a surface of a component in a plasma chamber includes an insulation layer on the surface and a plasma-resistant layer on the insulation layer. The plasma-resistant layer includes one or more stacks, where each stack includes a crystalline layer and an amorphous layer. The anti-plasma coating improves a lifetime of the component in the plasma chamber with high-energy plasma sources.