公开(公告)号：US20250133759A1

公开(公告)日：2025-04-24

申请号：US18420550

申请日：2024-01-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hsiu Chiang ,  Pei Ying Lai ,  Cheng-Hao Hou ,  Chi On Chui ,  Shan-Mei Liao ,  Hung-Chi Wu

IPC: H01L29/66 ,  H01L29/78

Abstract: A method forming a source/drain region based on a first portion of a semiconductor region, forming a high-k dielectric layer based on a second portion of the semiconductor region, forming a dipole film on the high-k dielectric layer, performing a treatment process on the dipole film using a process gas comprising nitrogen and hydrogen, performing a drive-in process to drive a dipole dopant in the dipole film into the high-k dielectric layer, and depositing a work-function layer on the high-k dielectric layer.

公开(公告)号：US20240313041A1

公开(公告)日：2024-09-19

申请号：US18184119

申请日：2023-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shin-Hung Tsai ,  Chun-Hsiu Chiang ,  Cheng-Hao Hou ,  Da-Yuan Lee ,  Chi On Chui

IPC: H01L21/768 ,  H01G4/008 ,  H01L23/522

CPC classification number: H01L28/60 ,  H01G4/008 ,  H01L21/76826 ,  H01L21/76832 ,  H01L23/5223 ,  H01L23/5226

Abstract: A method includes forming a first electrode, and depositing a dielectric layer over the first electrode. The dielectric layer has a first dielectric constant and a first thickness. A dielectric capping layer is deposited over the dielectric layer. The dielectric capping layer has a second dielectric constant higher than the first dielectric constant, and a second thickness smaller than the first thickness. The method further includes forming a second electrode over the dielectric capping layer, forming a first contact plug electrically connecting to the first electrode, and forming a second contact plug electrically connecting to the second electrode.